A memory circuit and method to reduce wordline coupling is disclosed. The circuit includes a plurality of memory cells arranged in rows (702, 704, and 706) and columns (750, 752). A first conductor (710, 850 ) is coupled to a plurality of the rows (702, 704, and 706) of memory cells. A first transistor (810) has a current path coupled between a voltage supply terminal (800) and the first conductor (850) and a control terminal coupled to receive a first control signal (PLV). A second transistor (820) has a current path coupled between the voltage supply terminal and the first conductor and a control terminal coupled to receive a second control signal (PLW).