发明申请
- 专利标题： Method for Fabricating Semiconductor Device
- 专利标题（中）： 半导体器件制造方法
-
申请号： US11861087申请日： 2007-09-25
-
公开(公告)号： US20080081466A1公开(公告)日： 2008-04-03
- 发明人: Mie MATSUO , Hisashi KANEKO
- 申请人： Mie MATSUO , Hisashi KANEKO
- 优先权： JP2006-264186 20060928
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/311
摘要：
A method for fabricating a semiconductor device, includes forming an opening in a first film, embedding an alignment mark material for alignment with an upper layer in the opening, forming a second film on the first film in which the alignment mark material is embedded, irradiating the second film formed in a predetermined region including a position where the alignment mark material is embedded with a processing light, thereby to remove the second film to an extent that a portion of the second film remains in the predetermined region, and exposing the portion of the second film remaining in the predetermined region to an etching environment for etching the second film.
公开/授权文献
- US07608537B2 Method for fabricating semiconductor device 公开/授权日：2009-10-27