公开(公告)号：US20080081466A1

公开(公告)日：2008-04-03

申请号：US11861087

申请日：2007-09-25

申请人： Mie MATSUO ,  Hisashi KANEKO

发明人： Mie MATSUO ,  Hisashi KANEKO

IPC分类号： H01L21/44 ,  H01L21/311

CPC分类号： H01L21/76885 ,  G03F9/708 ,  G03F9/7084 ,  H01L22/34 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device, includes forming an opening in a first film, embedding an alignment mark material for alignment with an upper layer in the opening, forming a second film on the first film in which the alignment mark material is embedded, irradiating the second film formed in a predetermined region including a position where the alignment mark material is embedded with a processing light, thereby to remove the second film to an extent that a portion of the second film remains in the predetermined region, and exposing the portion of the second film remaining in the predetermined region to an etching environment for etching the second film.

摘要翻译： 一种制造半导体器件的方法，包括在第一膜中形成开口，在开口中嵌入用于与上层对准的对准标记材料，在其中嵌入对准标记材料的第一膜上形成第二膜，照射 所述第二膜形成在包括所述对准标记材料被嵌入处理光的位置的预定区域中，从而将所述第二膜移除到所述第二膜的一部分保留在所述预定区域中的程度， 所述第二膜保留在所述预定区域中以蚀刻所述第二膜的蚀刻环境。

公开(公告)号：US20080296165A1

公开(公告)日：2008-12-04

申请号：US12127653

申请日：2008-05-27

申请人： Junji KUNISAWA ,  Mitsuko ODAGAKI ,  Natsuki MAKINO ,  Koji MISHIMA ,  Kenji NAKAMURA ,  Hiroaki INOUE ,  Norio KIMURA ,  Tetsuo MATSUDA ,  Hisashi KANEKO ,  Nobuo HAYASAKA ,  Katsuya OKUMURA ,  Manabu TSUJIMURA ,  Toshiyuki MORITA

发明人： Junji KUNISAWA ,  Mitsuko ODAGAKI ,  Natsuki MAKINO ,  Koji MISHIMA ,  Kenji NAKAMURA ,  Hiroaki INOUE ,  Norio KIMURA ,  Tetsuo MATSUDA ,  Hisashi KANEKO ,  Nobuo HAYASAKA ,  Katsuya OKUMURA ,  Manabu TSUJIMURA ,  Toshiyuki MORITA

IPC分类号： C25D5/02

CPC分类号： H01L21/6719 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  C25D17/14 ,  H01L21/2885 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/6723 ,  H01L21/76877 ,  H01L21/76879 ,  H01L2924/0002 ,  H05K3/423 ,  H01L2924/00

摘要： A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

摘要翻译： 用于衬底的电镀方法和装置将诸如铜的金属填充到形成在半导体衬底中的精细互连图案中。 该装置具有基板保持部分36，其水平地保持并旋转基板，其表面被面向上。 密封材料90接触表面的周缘部分，以水密的方式密封该部分。 阴极电极88在与基板接触时通过电流。 阴极部38与基板保持部36一体地旋转。电极臂部30在阴极部38的上方，水平且垂直地移动，阳极98面朝下。 将电镀液注入被镀表面与接近待镀表面的阳极98之间的空间中。 因此，电镀处理和附带的处理可以通过单个单元进行。