发明申请
- 专利标题： Sputtering Chamber Having Auxiliary Backside Magnet to Improve Etch Uniformity and Magnetron Producing Sustained Self Sputtering of Ruthenium and Tantalum
- 专利标题（中）： 具有辅助背面磁铁的溅射室，以提高蚀刻均匀性和制造钌和钽的持续自溅射的磁控管
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申请号： US11689720申请日： 2007-03-22
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公开(公告)号： US20080083610A1公开(公告)日： 2008-04-10
- 发明人: Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
- 申请人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： C23C14/35
- IPC分类号： C23C14/35
摘要：
A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.
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