发明申请
- 专利标题： MEMORY CELL SYSTEM WITH CHARGE TRAP
- 专利标题（中）： 带有电荷捕获的存储单元系统
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申请号： US11539984申请日： 2006-10-10
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公开(公告)号： US20080083946A1公开(公告)日： 2008-04-10
- 发明人: Shenqing Fang , Rinji Sugino , Jayendra Bhakta , Takashi Orimoto , Hiroyuki Nansei , Yukio Hayakawa , Takayuki Maruyama , Hidehiko Shiraiwa , Kuo-Tung Chang , Lei Xue , Meng Ding , Amol Ramesh Joshi , YouSeok Suh , Harpreet Sachar
- 申请人： Shenqing Fang , Rinji Sugino , Jayendra Bhakta , Takashi Orimoto , Hiroyuki Nansei , Yukio Hayakawa , Takayuki Maruyama , Hidehiko Shiraiwa , Kuo-Tung Chang , Lei Xue , Meng Ding , Amol Ramesh Joshi , YouSeok Suh , Harpreet Sachar
- 申请人地址： US CA Sunnyvale US CA Sunnyvale
- 专利权人： SPANSION LLC,ADVANCED MICRO DEVICES, INC.
- 当前专利权人： SPANSION LLC,ADVANCED MICRO DEVICES, INC.
- 当前专利权人地址： US CA Sunnyvale US CA Sunnyvale
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/8238
摘要：
A memory cell system is provided including forming a first insulator layer over a semiconductor substrate, forming a charge trap layer over the first insulator layer, and slot plane antenna plasma oxidizing the charge trap layer for forming a second insulator layer.
公开/授权文献
- US08143661B2 Memory cell system with charge trap 公开/授权日：2012-03-27
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