发明申请
US20080085591A1 Novel Gate Structure with Low Resistance for High Power Semiconductor Devices
有权
具有低电阻的大功率半导体器件的新型门结构
- 专利标题： Novel Gate Structure with Low Resistance for High Power Semiconductor Devices
- 专利标题（中）： 具有低电阻的大功率半导体器件的新型门结构
-
申请号： US11539482申请日： 2006-10-06
-
公开(公告)号： US20080085591A1公开(公告)日： 2008-04-10
- 发明人: Mercedes P. Gomez , Emil M. Hanna , Wen-Ben Luo , Qingchun Zhang
- 申请人： Mercedes P. Gomez , Emil M. Hanna , Wen-Ben Luo , Qingchun Zhang
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205
摘要：
In accordance with an embodiment of the present invention, a gate structure for a U-shape Metal-Oxide-Semiconductor (UMOS) device includes a dielectric layer formed into a U-shape having side walls and a floor to form a trench surrounding a dielectric layer interior region, a doped poly-silicon layer deposited adjacent to the dielectric layer within the dielectric layer interior region where the doped poly-silicon layer has side walls and a floor surrounding a doped poly-silicon layer interior region, a first metal layer deposited on the doped poly-silicon layer on a side opposite from the dielectric layer where the first metal layer has side walls and a floor surrounding a first metal layer interior region, and an undoped poly-silicon layer deposited to fill the first metal layer interior region.
公开/授权文献
信息查询
IPC分类:
