发明申请
- 专利标题： NAND flash memory devices having 3-dimensionally arranged memory cells and methods of fabricating the same
- 专利标题（中）： 具有三维排列的存储单元的NAND闪存器件及其制造方法
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申请号： US11653890申请日： 2007-01-17
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公开(公告)号： US20080087932A1公开(公告)日： 2008-04-17
- 发明人: Yang-Soo Son , Young-Seop Rah , Won-Seok Cho , Soon-Moon Jung , Jae-Hoon Jang , Young-Chul Jang
- 申请人： Yang-Soo Son , Young-Seop Rah , Won-Seok Cho , Soon-Moon Jung , Jae-Hoon Jang , Young-Chul Jang
- 优先权： KR2006-99015 20061011
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A NAND flash memory device includes a lower semiconductor layer and an upper semiconductor layer located over the lower semiconductor layer, a first drain region and a first source region located in the lower semiconductor layer, and a second drain region and a second source region located in the upper semiconductor layer. A first gate structure is located on the lower semiconductor layer, and a second gate structure is located on the upper semiconductor layer. A bit line is located over the upper semiconductor layer, and at least one bit line plug is connected between the bit line and the first drain region, where the at least one bit line plug extends through a drain throughhole located in the upper semiconductor layer.
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