发明申请
- 专利标题: Light emitting device and method of manufacturing thereof background of the invention
- 专利标题(中): 发明装置及其制造方法本发明的背景技术
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申请号: US11984552申请日: 2007-11-19
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公开(公告)号: US20080088245A1公开(公告)日: 2008-04-17
- 发明人: Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Keiko Saito , Hisao Ikeda
- 申请人: Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Keiko Saito , Hisao Ikeda
- 申请人地址: JP Atsugi-shi 243-0036
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi 243-0036
- 优先权: JP2003-328942 20030919
- 主分类号: G09G3/10
- IPC分类号: G09G3/10
摘要:
The present invention provides a highly stable light emitting device having high light-emitting efficiency (light-extraction efficiency) with high luminance and low power consumption, and a method of manufacturing thereof. A partition wall and a heat-resistant planarizing film are formed of a same material so as to be well-adhered to each other, thereby reducing material costs. Either an anode or a cathode is formed on the heat-resistant planarizing film. The partition wall and the heat-resistant planarizing film is adhered to each other without inserting a film having different refractive index therebetween, and therefore reflection of light is not caused in an interface.
公开/授权文献
- US07737449B2 Light emitting device and method of manufacturing thereof 公开/授权日:2010-06-15
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