发明申请
US20080090402A1 DENSIFYING SURFACE OF POROUS DIELECTRIC LAYER USING GAS CLUSTER ION BEAM
审中-公开
使用气体离子束对多孔介质层的表面进行测量
- 专利标题： DENSIFYING SURFACE OF POROUS DIELECTRIC LAYER USING GAS CLUSTER ION BEAM
- 专利标题（中）： 使用气体离子束对多孔介质层的表面进行测量
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申请号： US11536893申请日： 2006-09-29
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公开(公告)号： US20080090402A1公开(公告)日： 2008-04-17
- 发明人: Griselda Bonilla , Shyng-Tsong Chen , John A. Fitzsimmons , Sanjay Mehta , Shom Ponoth
- 申请人： Griselda Bonilla , Shyng-Tsong Chen , John A. Fitzsimmons , Sanjay Mehta , Shom Ponoth
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method of fabricating and a structure of an integrated circuit (IC) incorporating a porous dielectric layer are disclosed. A metal line is formed in the porous dielectric layer. A gas cluster ion beam process is applied to the porous dielectric layer so that an upper portion of the dielectric layer is densified to be not porous or non-interconnected low porous, while a lower portion of the porous dielectric layer still maintains its ultra-low dielectric constant after the gas cluster ion beam process.
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