Invention Application
- Patent Title: SEMICONDUCTOR DEVICE HAVING A PASSIVE DEVICE
- Patent Title (中): 具有被动设备的半导体器件
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Application No.: US11848251Application Date: 2007-08-31
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Publication No.: US20080093702A1Publication Date: 2008-04-24
- Inventor: Hung-Hsiang Cheng , Sung-Mao Wu
- Applicant: Hung-Hsiang Cheng , Sung-Mao Wu
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Priority: TW095139023 20061023
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
The present invention relates to a semiconductor device having a passive device. The semiconductor device includes a substrate and at least one passive device. The substrate has at least one via. The via has at least two conductive elements therein. The conductive elements are not electrically connected to each other. The passive device has at least two electrodes, and is disposed on the substrate. The electrodes are electrically connected to the conductive elements respectively. The passive device needs only one via, so the amount of vias can be reduced effectively. In addition, the conductive path formed by the conductive elements and the passive device is relatively short, so that the inductance is lowered and the electrical performance is raised.
Information query
IPC分类: