发明申请
- 专利标题: Non-volatile memory cells having a polysilicon-containing, multi-layer insulating structure, memory arrays including the same and methods of operating the same
- 专利标题(中): 具有含多晶硅的多层绝缘结构的非易失性存储单元,包括其的存储器阵列及其操作方法
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申请号: US11588830申请日: 2006-10-27
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公开(公告)号: US20080099826A1公开(公告)日: 2008-05-01
- 发明人: Erh-Kun Lai , Yen-Hao Shih , Tzu-Hsuan Hsu , Shih-Chih Lee , Jung-Yu Hsieh , Kuang-Yeu Hsieh
- 申请人: Erh-Kun Lai , Yen-Hao Shih , Tzu-Hsuan Hsu , Shih-Chih Lee , Jung-Yu Hsieh , Kuang-Yeu Hsieh
- 专利权人: Macronix International Co., Ltd.
- 当前专利权人: Macronix International Co., Ltd.
- 主分类号: H01L29/792
- IPC分类号: H01L29/792
摘要:
Memory cells including a semiconductor layer having at least two source/drain regions disposed below a surface of the semiconductor layer and separated by a channel region; a lower insulating layer disposed above the channel region; a charge storage layer disposed above the lower insulating layer; an upper insulating multi-layer structure disposed above the charge storage layer, wherein the upper insulating multi-layer structure comprises a polysilicon material layer interposed between a first dielectric layer and a second dielectric layer; and a gate disposed above the upper insulating multi-layer structure are described along with arrays thereof and methods of operation.