发明申请
- 专利标题: Semiconductor Device and Manufacturing Method of the Same
- 专利标题(中): 半导体器件及其制造方法
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申请号: US11884016申请日: 2006-02-07
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公开(公告)号: US20080099878A1公开(公告)日: 2008-05-01
- 发明人: Mikio Yukawa , Gen Fujii , Hironobu Shoji
- 申请人: Mikio Yukawa , Gen Fujii , Hironobu Shoji
- 申请人地址: JP Atsugi-shi 243-0036
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi 243-0036
- 优先权: JP2005-035266 20050210
- 国际申请: PCT/JP06/02417 WO 20060207
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L21/44
摘要:
It is an object of the present invention to provide a high-performance and high reliable semiconductor device and to provide a technique of manufacturing the semiconductor device at low cost with high yield. The semiconductor device is manufactured by steps of forming a first conductive layer, forming a first liquid-repellent layer over the first conductive layer, discharging a composition containing a material for a mask layer over the first liquid-repellent layer to form a mask layer, processing the first liquid-repellent layer with the use of the mask layer, forming a second liquid-repellent layer, forming an insulating layer over the first conductive layer and the second conductive layer, and forming a second conductive layer over the insulating layer.
公开/授权文献
- US07977669B2 Semiconductor memory device having a liquid-repellent layer 公开/授权日:2011-07-12
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