公开(公告)号：US07977669B2

公开(公告)日：2011-07-12

申请号：US11884016

申请日：2006-02-07

申请人： Mikio Yukawa ,  Gen Fujii ,  Hironobu Shoji

发明人： Mikio Yukawa ,  Gen Fujii ,  Hironobu Shoji

IPC分类号： H01L35/24 ,  H01L51/00 ,  H01L47/00

CPC分类号： G11C13/0014 ,  G11C13/004 ,  G11C2013/0042 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/283

摘要： It is an object of the present invention to provide a high-performance and high reliable semiconductor device and to provide a technique of manufacturing the semiconductor device at low cost with high yield. The semiconductor device is manufactured by steps of forming a first conductive layer, forming a first liquid-repellent layer over the first conductive layer, discharging a composition containing a material for a mask layer over the first liquid-repellent layer to form a mask layer, processing the first liquid-repellent layer with the use of the mask layer, forming a second liquid-repellent layer, forming an insulating layer over the first conductive layer and the second conductive layer, and forming a second conductive layer over the insulating layer.

摘要翻译： 本发明的目的是提供一种高性能和高可靠性的半导体器件，并且以高成本提供低成本制造半导体器件的技术。 半导体器件通过以下步骤制造：形成第一导电层，在第一导电层上形成第一液体排斥层，在第一拒液层上排出含有掩模层的材料的组合物以形成掩模层， 使用掩模层处理第一液体排斥层，形成第二疏液层，在第一导电层和第二导电层上形成绝缘层，并在绝缘层上形成第二导电层。

公开(公告)号：US20080099878A1

公开(公告)日：2008-05-01

申请号：US11884016

申请日：2006-02-07

申请人： Mikio Yukawa ,  Gen Fujii ,  Hironobu Shoji

发明人： Mikio Yukawa ,  Gen Fujii ,  Hironobu Shoji

IPC分类号： H01L29/66 ,  H01L21/44

CPC分类号： G11C13/0014 ,  G11C13/004 ,  G11C2013/0042 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/283

摘要： It is an object of the present invention to provide a high-performance and high reliable semiconductor device and to provide a technique of manufacturing the semiconductor device at low cost with high yield. The semiconductor device is manufactured by steps of forming a first conductive layer, forming a first liquid-repellent layer over the first conductive layer, discharging a composition containing a material for a mask layer over the first liquid-repellent layer to form a mask layer, processing the first liquid-repellent layer with the use of the mask layer, forming a second liquid-repellent layer, forming an insulating layer over the first conductive layer and the second conductive layer, and forming a second conductive layer over the insulating layer.

摘要翻译： 本发明的目的是提供一种高性能和高可靠性的半导体器件，并且以高成本提供低成本制造半导体器件的技术。 半导体器件通过以下步骤制造：形成第一导电层，在第一导电层上形成第一液体排斥层，在第一拒液层上排出含有掩模层的材料的组合物以形成掩模层， 使用掩模层处理第一液体排斥层，形成第二疏液层，在第一导电层和第二导电层上形成绝缘层，并在绝缘层上形成第二导电层。

公开(公告)号：US08847209B2

公开(公告)日：2014-09-30

申请号：US13085727

申请日：2011-04-13

申请人： Mikio Yukawa

发明人： Mikio Yukawa

IPC分类号： H01L35/24 ,  G11C13/04 ,  G11C13/00 ,  B82Y10/00 ,  H01L27/13 ,  H01L51/52

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0009 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/13 ,  H01L51/52

摘要： The present invention provides a memory device and a semiconductor device which have high reliability for writing at low cost. Furthermore, the present invention provides a memory device and a semiconductor device having a non-volatile memory element in which data can be additionally written and which can prevent forgery due to rewriting and the like. The memory element includes a first conductive layer, a second conductive layer, and an organic compound layer, which is formed between the first conductive layer and the second conductive layer, and which has a photosensitized oxidation reduction agent which can be an excited state by recombination energy of electrons and holes and a substance which can react with the photosensitized oxidation reduction agent.

摘要翻译： 本发明提供了一种以低成本写入的高可靠性的存储器件和半导体器件。 此外，本发明提供了一种具有非易失性存储元件的存储器件和半导体器件，其中可以额外地写入数据，并且可以防止由于重写等引起的伪造。 存储元件包括形成在第一导电层和第二导电层之间的第一导电层，第二导电层和有机化合物层，并且其具有通过复合可以是激发态的光敏氧化还原剂 电子和空穴的能量以及可与光敏氧化还原剂反应的物质。

公开(公告)号：US08664035B2

公开(公告)日：2014-03-04

申请号：US11826227

申请日：2007-07-13

申请人： Mikio Yukawa ,  Nozomu Sugisawa

发明人： Mikio Yukawa ,  Nozomu Sugisawa

IPC分类号： H01L51/40

CPC分类号： H01L27/112 ,  B82Y10/00 ,  G11C11/5664 ,  G11C13/0014 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2213/33 ,  G11C2213/34 ,  G11C2213/77 ,  G11C2213/79 ,  H01L21/84 ,  H01L24/12 ,  H01L24/28 ,  H01L24/81 ,  H01L24/83 ,  H01L27/11206 ,  H01L27/1203 ,  H01L2223/6677 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/81801 ,  H01L2224/83851 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01037 ,  H01L2924/01055 ,  H01L2924/01063 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/07811 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29075 ,  H01L2924/00014

摘要： An object is to reduce variations in programming behavior from memory element to memory element. Furthermore, an object is to obtain a semiconductor device with excellent writing characteristics and in which the memory element is mounted. The memory element includes a first conductive layer, a metal oxide layer, a semiconductor layer, an organic compound layer, and a second conductive layer, where the metal oxide layer, the semiconductor layer, and the organic compound layer are interposed between the first conductive layer and the second conductive layer; the metal oxide layer is provided in contact with the first conductive layer; and the semiconductor layer is provided in contact with the metal oxide layer. By use of this kind of structure, variations in programming behavior from memory element to memory element are reduced.

摘要翻译： 一个目的是减少编程行为从内存元素到内存元素的变化。 此外，目的是获得具有优良写入特性的半导体器件，并且其中安装存储元件。 存储元件包括第一导电层，金属氧化物层，半导体层，有机化合物层和第二导电层，其中金属氧化物层，半导体层和有机化合物层介于第一导电层 层和第二导电层; 金属氧化物层设置成与第一导电层接触; 并且所述半导体层设置成与所述金属氧化物层接触。 通过使用这种结构，减少了从存储元件到存储元件的编程行为的变化。

公开(公告)号：US08101943B2

公开(公告)日：2012-01-24

申请号：US11918611

申请日：2006-04-25

申请人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Ryoji Nomura ,  Yoshinobu Asami

发明人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Ryoji Nomura ,  Yoshinobu Asami

IPC分类号： H01L35/24 ,  H01L51/00

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/285 ,  H01L51/0591

摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semi-conductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.

摘要翻译： 本发明的目的是提供一种以低成本，高成品率地制造设置有存储装置的高性能且高可靠性的存储装置和半导体装置的技术。 半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。 此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造 包括绝缘体。

公开(公告)号：US07688624B2

公开(公告)日：2010-03-30

申请号：US11547905

申请日：2005-11-22

申请人： Hiroko Abe ,  Mikio Yukawa ,  Tamae Takano ,  Yoshinobu Asami ,  Kiyoshi Kato ,  Ryoji Nomura ,  Yoshitaka Moriya

发明人： Hiroko Abe ,  Mikio Yukawa ,  Tamae Takano ,  Yoshinobu Asami ,  Kiyoshi Kato ,  Ryoji Nomura ,  Yoshitaka Moriya

IPC分类号： G11C11/34

CPC分类号： H01L27/1266 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/04 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/13 ,  H01L27/283 ,  H01L51/0059

摘要： It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.

摘要翻译： 本发明的一个目的是提供一种挥发性有机存储器，其中除了在制造期间可以写入数据，并且可以防止通过改写伪造，并提供包括这种有机存储器的半导体器件。 本发明的特征在于，半导体器件包括沿第一方向延伸的多个位线; 沿与第一方向不同的第二方向延伸的多个字线; 存储单元阵列，包括多个存储单元，每个存储单元分别设置在位线和字线的交点之一处; 以及设置在存储单元中的存储元件，其中存储元件包括位线，有机化合物层和字线，有机化合物层包括混合有无机化合物和有机化合物的层。

公开(公告)号：US20090140231A1

公开(公告)日：2009-06-04

申请号：US11918960

申请日：2006-04-25

申请人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami ,  Ikuko Kawamata ,  Shunpei Yamazaki

发明人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami ,  Ikuko Kawamata ,  Shunpei Yamazaki

IPC分类号： H01L45/00 ,  H01L51/40

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/13 ,  H01L27/285

摘要： It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality of insulators, an organic compound layer over the first conductive layer including the insulators, and a second conductive layer over the organic compound layer.

摘要翻译： 本发明的目的是提供一种以低成本，高产率地制造高性能和高可靠性的半导体器件的技术。 根据本发明的存储器件具有包括多个绝缘体的第一导电层，包括绝缘体的第一导电层上的有机化合物层，以及有机化合物层上的第二导电层。

公开(公告)号：US20080210928A1

公开(公告)日：2008-09-04

申请号：US11547632

申请日：2005-10-18

申请人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

发明人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

IPC分类号： H01L51/10 ,  H01L27/108 ,  H01L33/00

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/00 ,  G11C17/14 ,  G11C17/143 ,  G11C17/16 ,  H01L27/285 ,  H01L51/0051 ,  H01L51/0059

摘要： The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order.

摘要翻译： 本发明提供一种半导体器件，其具有其中有机化合物层夹在一对导电层之间的简单结构的存储元件和这种半导体器件的制造方法。 利用该特征，提供了具有非易失性，可追加记录和容易制造的存储电路的半导体器件和这种半导体器件的制造方法。 根据本发明的半导体器件具有设置在绝缘层上的多个场效应晶体管和设置在多个场效应晶体管上的多个存储元件。 多个场效应晶体管中的每一个使用单晶半导体层作为沟道部分，并且多个存储元件中的每一个是其中堆叠第一导电层，有机化合物层和第二导电层的元件 为了。

公开(公告)号：US20080128517A1

公开(公告)日：2008-06-05

申请号：US11987124

申请日：2007-11-27

申请人： Mikio Yukawa ,  Nozomu Sugisawa ,  Takaaki Nagata ,  Shuhei Yoshitomi ,  Michiko Aizawa

发明人： Mikio Yukawa ,  Nozomu Sugisawa ,  Takaaki Nagata ,  Shuhei Yoshitomi ,  Michiko Aizawa

IPC分类号： G06K19/07 ,  H01L21/84

CPC分类号： H01L51/105 ,  G11C13/0016 ,  G11C13/004 ,  H01L27/283 ,  H01L51/006 ,  H01L51/0591

摘要： In a method for manufacturing a flexible memory device and semiconductor device, a stack including an element layer and an insulating layer which seals the element layer is formed over a substrate having a separation layer, and the stack is separated from the separation layer. The element layer includes a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, and at least one of the pair of electrode layers is formed using an alloy layer containing tin. The flexible memory device and semiconductor device include a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, in which at least one of the pair of electrode layers is formed using an alloy layer containing tin.

摘要翻译： 在制造柔性存储器件和半导体器件的方法中，在具有分离层的衬底上形成包括元件层和密封元件层的绝缘层的堆叠，并且将堆叠与分离层分离。 元件层包括在一对电极，第一电极层和第二电极层之间具有含有有机化合物的层的存储元件，并且使用含有锡的合金层形成所述一对电极层中的至少一个。 柔性存储器件和半导体器件包括具有在一对电极之间含有有机化合物的层的存储元件，第一电极层和第二电极层，其中使用合金形成一对电极层中的至少一个 含锡层。

公开(公告)号：US20080093462A1

公开(公告)日：2008-04-24

申请号：US11587531

申请日：2005-11-28

申请人： Hiroko Abe ,  Mikio Yukawa ,  Ryoji Nomura ,  Satoshi Seo ,  Shunpei Yamazaki

发明人： Hiroko Abe ,  Mikio Yukawa ,  Ryoji Nomura ,  Satoshi Seo ,  Shunpei Yamazaki

IPC分类号： G06K19/06

CPC分类号： H01L27/10 ,  B82Y10/00 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0014 ,  G11C17/16 ,  G11C2213/32 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/12 ,  H01L27/28 ,  H01L27/283 ,  H01L29/78645 ,  H01L51/0059

摘要： It is an object of the present invention to provide a semiconductor device having a memory circuit which is nonvolatile and able to be written additionally, an antenna which can be easily manufactured, and to provide a manufacturing method thereof. In addition, it is an object of the present invention to prevent unauthorized rewriting of information of a wireless chip and forgery of a wireless chip itself and to ensure a security of a wireless chip. In view of the foregoing, the present invention provides an IC tag in which information thereof is identified by wireless communication signal and also information of a memory in an IC tag (a memory which can not be rewritten) is identified by an optical reading device. A memory in an IC tag according to the present invention has an identification surface with which information can be identified by an optical reading device.

摘要翻译： 本发明的目的是提供一种具有非易失性且能够被写入的存储电路的半导体器件，可容易地制造的天线，并提供其制造方法。 此外，本发明的目的是防止无线芯片的信息的未经授权的重写和无线芯片本身的伪造并且确保无线芯片的安全性。 鉴于上述情况，本发明提供了一种IC标签，其中通过无线通信信号识别信息，并且还通过光学读取装置识别IC标签（不能被重写的存储器）中的存储器的信息。 根据本发明的IC标签中的存储器具有可由光学读取装置识别信息的识别表面。