公开(公告)号：US10141120B2

公开(公告)日：2018-11-27

申请号：US13033877

申请日：2011-02-24

申请人： Shunpei Yamazaki ,  Tamae Moriwaka ,  Kazutaka Kuriki ,  Mikio Yukawa

发明人： Shunpei Yamazaki ,  Tamae Moriwaka ,  Kazutaka Kuriki ,  Mikio Yukawa

IPC分类号： H01M6/04 ,  H01G11/26 ,  H01G11/46 ,  H01M4/131 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/36 ,  H01M4/587 ,  H01M4/62 ,  H01M10/0525 ,  H01M10/0561 ,  H01G11/28 ,  H01G11/32 ,  H01M4/02

摘要： The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.

公开(公告)号：US08994086B2

公开(公告)日：2015-03-31

申请号：US12904313

申请日：2010-10-14

申请人： Shunpei Yamazaki ,  Hiroko Abe ,  Yukie Nemoto ,  Ryoji Nomura ,  Mikio Yukawa

发明人： Shunpei Yamazaki ,  Hiroko Abe ,  Yukie Nemoto ,  Ryoji Nomura ,  Mikio Yukawa

IPC分类号： H01L21/3205 ,  H01L21/822 ,  B82Y10/00 ,  G11C13/00 ,  G11C17/14 ,  G11C17/16 ,  G11C17/18 ,  H01L27/06 ,  H01L27/24 ,  H01L45/00 ,  H01L27/12

CPC分类号： H01L27/2463 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C17/143 ,  G11C17/16 ,  G11C17/18 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L21/8221 ,  H01L23/66 ,  H01L27/0688 ,  H01L27/1266 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/283 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1213 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L51/0098 ,  H01L2223/6677 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

摘要翻译： 本发明提供了一种非易失性，易于制造并且可另外写入的半导体器件。 本发明的半导体器件包括多个晶体管，用作晶体管的源极布线或漏极布线的导电层，以及与多个晶体管之一重叠的存储元件，以及用作 天线。 存储元件包括第一导电层，有机化合物层和相变层，以及依次层叠的第二导电层。 用作天线的导电层和用作多个晶体管的源极布线或漏极布线的导电层设置在同一层上。

公开(公告)号：US08795895B2

公开(公告)日：2014-08-05

申请号：US13049407

申请日：2011-03-16

申请人： Mikio Yukawa ,  Tamae Moriwaka

发明人： Mikio Yukawa ,  Tamae Moriwaka

IPC分类号： H01M4/58 ,  H01M4/26 ,  C23C14/34 ,  C23C14/06

摘要： A power storage device with favorable battery characteristics and a manufacturing method thereof are provided. The power storage device includes at least a positive electrode and a negative electrode provided so as to face the positive electrode with an electrolyte provided therebetween. The positive electrode includes a collector and a film containing an active material over the collector. The film containing the active material contains LieFefPgOh satisfying relations 3.5≦h/g≦4.5, 0.6≦g/f≦1.1, and 0≦e/f≦1.3 and LiaFebPcOd satisfying relations 3.5≦d/c≦4.5, 0.6≦c/b≦1.8, and 0.7≦a/b≦2.8. The film containing the active material contains the LiaFebPcOd satisfying the relations 3.5≦d/c≦4.5, 0.6≦c/b≦1.8, and 0.7≦a/b≦2.8 in a region which is in contact with the electrolyte.

公开(公告)号：US20130059195A1

公开(公告)日：2013-03-07

申请号：US13597652

申请日：2012-08-29

申请人： Kazutaka Kuriki ,  Mikio Yukawa ,  Nobuhiro Inoue

发明人： Kazutaka Kuriki ,  Mikio Yukawa ,  Nobuhiro Inoue

IPC分类号： H01M4/64 ,  H01G9/04 ,  H01M2/02

CPC分类号： H01G11/28 ,  H01G11/26 ,  H01G11/50 ,  H01M4/134 ,  H01M4/366 ,  H01M4/621 ,  H01M4/625 ,  H01M4/667 ,  H01M10/052 ,  H01M2004/021 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54

摘要： To provide an electrode for a power storage device, which has high reliability and can be miniaturized. To provide a power storage device including the electrode. In the electrode, a stress-relieving layer which relieves internal stress of an active material layer including a whisker is provided over a current collector. By the stress-relieving layer, deformation of the current collector can be suppressed and the productivity of the power storage device can be increased. In addition, the size of the power storage device can be reduced and the reliability thereof can be increased. Graphene may be formed so as to cover the active material layer including a whisker.

摘要翻译： 提供具有高可靠性并且可以小型化的蓄电装置用电极。 提供包括电极的蓄电装置。 在电极中，在集电体上设置减轻包含晶须的活性物质层的内部应力的应力消除层。 通过应力消除层，能够抑制集电体的变形，能够提高蓄电装置的生产率。 另外，能够减小蓄电装置的尺寸，提高其可靠性。 可以形成石墨烯以覆盖包括晶须的活性物质层。

公开(公告)号：US08315288B2

公开(公告)日：2012-11-20

申请号：US12549411

申请日：2009-08-28

申请人： Mikio Yukawa ,  Tetsuo Tsutsui

发明人： Mikio Yukawa ,  Tetsuo Tsutsui

IPC分类号： H01S3/20

CPC分类号： H01S3/168 ,  H01S3/025 ,  H01S3/08009 ,  H01S3/091 ,  H01S3/094034 ,  H01S3/23

摘要： To reduce the laser threshold by efficiently exciting a light-emitting body in a solid-state dye laser with light having high density, thereby facilitating emission of laser beams, and to miniaturize a solid-state dye laser including an excitation light source. A solid-state dye laser capable of emitting laser beams by efficiently introducing light from an excitation light source to a light-emitting body incorporated in an optical resonator structure and exciting the light-emitting body with light with high density, is realized.

摘要翻译： 为了通过在具有高密度的光的固态染料激光器中有效地激发发光体来降低激光阈值，从而促进激光束的发射，并且使包括激发光源的固态染料激光器小型化。 实现了能够通过有效地将来自激发光源的光引入到结合在光学谐振器结构中的发光体并且用高密度的光激发发光体来发射激光束的固态染料激光器。

公开(公告)号：US08295104B2

公开(公告)日：2012-10-23

申请号：US12618161

申请日：2009-11-13

申请人： Hiroko Abe ,  Mikio Yukawa ,  Tamae Takano ,  Yoshinobu Asami ,  Kiyoshi Kato ,  Ryoji Nomura ,  Yoshitaka Moriya

发明人： Hiroko Abe ,  Mikio Yukawa ,  Tamae Takano ,  Yoshinobu Asami ,  Kiyoshi Kato ,  Ryoji Nomura ,  Yoshitaka Moriya

IPC分类号： G11C7/00

CPC分类号： H01L27/1266 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/04 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/13 ,  H01L27/283 ,  H01L51/0059

摘要： It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.

摘要翻译： 本发明的一个目的是提供一种挥发性有机存储器，其中除了在制造期间可以写入数据，并且可以防止通过改写伪造，并提供包括这种有机存储器的半导体器件。 本发明的特征在于，半导体器件包括沿第一方向延伸的多个位线; 沿与第一方向不同的第二方向延伸的多个字线; 存储单元阵列，包括多个存储单元，每个存储单元分别设置在位线和字线的交点之一处; 以及设置在存储单元中的存储元件，其中存储元件包括位线，有机化合物层和字线，有机化合物层包括混合有无机化合物和有机化合物的层。

公开(公告)号：US20120108029A1

公开(公告)日：2012-05-03

申请号：US13295304

申请日：2011-11-14

申请人： Mikio YUKAWA ,  Nobuharu OHSAWA ,  Ryoji NOMURA ,  Yoshinobu ASAMI

发明人： Mikio YUKAWA ,  Nobuharu OHSAWA ,  Ryoji NOMURA ,  Yoshinobu ASAMI

IPC分类号： H01L21/02

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/285 ,  H01L51/0591

摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.

摘要翻译： 本发明的一个目的是提供一种以高成本低成本制造高性能且高可靠性的存储器件和设置有存储器件的半导体器件的技术。 半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。 此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造 包括绝缘体。

公开(公告)号：US08088654B2

公开(公告)日：2012-01-03

申请号：US12753194

申请日：2010-04-02

申请人： Naoto Kusumoto ,  Nobuharu Ohsawa ,  Mikio Yukawa ,  Yoshitaka Dozen

发明人： Naoto Kusumoto ,  Nobuharu Ohsawa ,  Mikio Yukawa ,  Yoshitaka Dozen

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  B82Y10/00 ,  G02F2001/13613 ,  G11C13/00 ,  G11C13/0014 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/1214 ,  H01L27/281 ,  H01L29/458 ,  H01L51/003 ,  H01L2251/558

摘要： To provide a semiconductor device which is higher functional and reliable and a technique capable of manufacturing the semiconductor device with a high yield at low cost without complexing the apparatus or process. At least one of a first conductive layer and a second conductive layer is formed containing one kind or plural kinds of indium, tin, lead, bismuth, calcium, manganese, or zinc; or oxidation treatment is performed at least one of interfaces between an organic compound layer and the first conductive layer and between the organic compound layer and the second conductive layer. The first conductive layer, the organic compound layer, and the second conductive layer which are formed over a first substrate with a peeling layer interposed therebetween can be peeled from the first substrate with the peeling layer, and transposed to a second substrate.

摘要翻译： 提供功能可靠性更高的半导体器件和能够以低成本高成品率地制造半导体器件而不使器件或工艺复杂化的技术。 形成含有一种或多种铟，锡，铅，铋，钙，锰或锌的至少一种第一导电层和第二导电层; 或氧化处理进行有机化合物层和第一导电层之间以及有机化合物层和第二导电层之间的界面中的至少一个。 在第一衬底上形成有剥离层的第一导电层，有机化合物层和第二导电层可以用剥离层从第一衬底剥离，并且转置到第二衬底。

公开(公告)号：US08023302B2

公开(公告)日：2011-09-20

申请号：US11578057

申请日：2006-01-26

申请人： Mikio Yukawa ,  Hiroko Abe ,  Shunpei Yamazaki

发明人： Mikio Yukawa ,  Hiroko Abe ,  Shunpei Yamazaki

IPC分类号： G11C5/02

CPC分类号： G11C11/404 ,  H01L21/84 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/12 ,  H01L27/285

摘要： It is an object of the present invention to provide an involatile memory device, in which additional writing of data is possible other than in manufacturing steps and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is also an object of the present invention to provide an inexpensive involatile memory device and a semiconductor device having high reliability. According to the present invention, a memory device includes a first conductive layer, a second conductive layer, and an insulating layer interposed between the first conductive layer and the second conductive layer, where the first conductive layer has a convex portion.

摘要翻译： 本发明的目的是提供一种非易失性存储装置，其中可以除制造步骤之外的附加数据写入以及由于重写而导致的伪造等以及具有该存储装置的半导体装置。 本发明的另一个目的是提供一种廉价的非易失性存储器件和具有高可靠性的半导体器件。 根据本发明，存储器件包括第一导电层，第二导电层和介于第一导电层和第二导电层之间的绝缘层，其中第一导电层具有凸部。

公开(公告)号：US20110186802A1

公开(公告)日：2011-08-04

申请号：US13085727

申请日：2011-04-13

申请人： Mikio YUKAWA

发明人： Mikio YUKAWA

IPC分类号： H01L45/00

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0009 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/13 ,  H01L51/52

摘要： The present invention provides a memory device and a semiconductor device which have high reliability for writing at low cost. Furthermore, the present invention provides a memory device and a semiconductor device having a non-volatile memory element in which data can be additionally written and which can prevent forgery due to rewriting and the like. The memory element includes a first conductive layer, a second conductive layer, and an organic compound layer, which is formed between the first conductive layer and the second conductive layer, and which has a photosensitized oxidation reduction agent which can be an excited state by recombination energy of electrons and holes and a substance which can react with the photosensitized oxidation reduction agent.

摘要翻译： 本发明提供了一种以低成本写入的高可靠性的存储器件和半导体器件。 此外，本发明提供了一种具有非易失性存储元件的存储器件和半导体器件，其中可以额外地写入数据，并且可以防止由于重写等引起的伪造。 存储元件包括形成在第一导电层和第二导电层之间的第一导电层，第二导电层和有机化合物层，并且其具有通过复合可以是激发态的光敏氧化还原剂 电子和空穴的能量以及可与光敏氧化还原剂反应的物质。