发明申请
US20080099913A1 METALLIZATION LAYER STACK WITHOUT A TERMINAL ALUMINUM METAL LAYER 审中-公开
金属层堆叠没有终端铝金属层

METALLIZATION LAYER STACK WITHOUT A TERMINAL ALUMINUM METAL LAYER
摘要:
By directly forming an underbump metallization layer on a contact region of the last metallization layer, the formation of any other terminal metals, such as aluminum and corresponding adhesion/barrier layers, may be avoided. Consequently, the thermal and electrical behavior of the resulting bump structure may be improved, while process complexity may be significantly reduced.
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