公开(公告)号：US20080099913A1

公开(公告)日：2008-05-01

申请号：US11752519

申请日：2007-05-23

申请人： Matthias Lehr ,  Frank Kuechenmeister ,  Lothar Lehmann ,  Marcel Wieland ,  Alexander Platz ,  Axel Walter ,  Gotthard Jungnickel

发明人： Matthias Lehr ,  Frank Kuechenmeister ,  Lothar Lehmann ,  Marcel Wieland ,  Alexander Platz ,  Axel Walter ,  Gotthard Jungnickel

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00

摘要： By directly forming an underbump metallization layer on a contact region of the last metallization layer, the formation of any other terminal metals, such as aluminum and corresponding adhesion/barrier layers, may be avoided. Consequently, the thermal and electrical behavior of the resulting bump structure may be improved, while process complexity may be significantly reduced.

摘要翻译： 通过在最后一个金属化层的接触区域上直接形成底部填充金属化层，可以避免任何其它终端金属如铝和相应的粘附/阻挡层的形成。 因此，可以提高所得到的凸块结构的热和电行为，同时可以显着地减少工艺复杂性。

公开(公告)号：US20130099372A1

公开(公告)日：2013-04-25

申请号：US13280881

申请日：2011-10-25

申请人： Frank Kuechenmeister ,  Lothar Lehmann ,  Alexander Platz ,  Gotthard Jungnickel ,  Sven Kosgalwies

发明人： Frank Kuechenmeister ,  Lothar Lehmann ,  Alexander Platz ,  Gotthard Jungnickel ,  Sven Kosgalwies

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L23/49811 ,  H01L23/291 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03009 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11849 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/05552

摘要： One illustrative method disclosed herein includes forming a conductive pad in a layer of insulating material, forming a passivation layer above the conductive pad, performing at least one etching process on the passivation layer to define an opening in the passivation layer that exposes at least a portion of the conductive pad, forming a protective layer on the passivation layer, in the opening and on the exposed portion of the conductive pad, forming a heat-curable material layer above the protective layer, performing an etching process to define a patterned heat-curable material layer having an opening that exposes a portion of the protective layer, performing an etching process on the protective layer to thereby expose at least a portion of the conductive pad and forming a conductive bump that is conductively coupled to the conductive pad.

摘要翻译： 本文公开的一种说明性方法包括在绝缘材料层中形成导电焊盘，在导电焊盘上形成钝化层，在钝化层上执行至少一个蚀刻工艺，以限定钝化层中的至少一部分 的导电焊盘，在导电焊盘的开口和暴露部分上在钝化层上形成保护层，在保护层上方形成可热固化的材料层，执行蚀刻工艺以限定图案化的可热固化 材料层具有露出所述保护层的一部分的开口，对所述保护层进行蚀刻处理，从而暴露所述导电焊盘的至少一部分，并形成与所述导电焊盘导电耦合的导电凸块。

公开(公告)号：US08580672B2

公开(公告)日：2013-11-12

申请号：US13280881

申请日：2011-10-25

申请人： Frank Kuechenmeister ,  Lothar Lehmann ,  Alexander Platz ,  Gotthard Jungnickel ,  Sven Kosgalwies

发明人： Frank Kuechenmeister ,  Lothar Lehmann ,  Alexander Platz ,  Gotthard Jungnickel ,  Sven Kosgalwies

IPC分类号： H01L21/44

CPC分类号： H01L23/49811 ,  H01L23/291 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03009 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11849 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/05552

摘要： One illustrative method disclosed herein includes forming a conductive pad in a layer of insulating material, forming a passivation layer above the conductive pad, performing at least one etching process on the passivation layer to define an opening in the passivation layer that exposes at least a portion of the conductive pad, forming a protective layer on the passivation layer, in the opening and on the exposed portion of the conductive pad, forming a heat-curable material layer above the protective layer, performing an etching process to define a patterned heat-curable material layer having an opening that exposes a portion of the protective layer, performing an etching process on the protective layer to thereby expose at least a portion of the conductive pad and forming a conductive bump that is conductively coupled to the conductive pad.

摘要翻译： 本文公开的一种说明性方法包括在绝缘材料层中形成导电焊盘，在导电焊盘上形成钝化层，在钝化层上执行至少一个蚀刻工艺，以限定钝化层中的至少一部分 的导电焊盘，在导电焊盘的开口和暴露部分上在钝化层上形成保护层，在保护层上方形成可热固化的材料层，执行蚀刻工艺以限定图案化的可热固化 材料层具有露出所述保护层的一部分的开口，对所述保护层进行蚀刻处理，从而暴露所述导电焊盘的至少一部分，并形成与所述导电焊盘导电耦合的导电凸块。

公开(公告)号：US06905533B2

公开(公告)日：2005-06-14

申请号：US10410841

申请日：2003-04-10

申请人： Franz Becker ,  Lothar Lehmann ,  Horst Wachtler

发明人： Franz Becker ,  Lothar Lehmann ,  Horst Wachtler

IPC分类号： B01D46/24 ,  C30B15/00 ,  C30B29/06 ,  B01D29/68

CPC分类号： B01D46/2407 ,  B01D46/0068 ,  B01D46/4272 ,  B01D50/002

摘要： A method for avoiding the spontaneous ignition of combustible dusts in process off-gases, wherein during the process the dusts are retained, without adversely affecting the process parameters, at least one sintered filter element which is arranged in a pressure vessel and is able to withstand temperatures of up to at least 250° C. and after the process has ended the dusts are inerted by blasting oxygen-containing gas back into the pressure vessel, and to a device for carrying out the method.

摘要翻译： 一种用于避免工艺废气中可燃粉尘的自发点燃的方法，其中在该过程中，灰尘被保留，而不会不利地影响工艺参数，至少一个烧结过滤器元件布置在压力容器中并且能够承受 高达至少250℃的温度，并且在该过程结束之后，通过将含氧气体喷射到压力容器中以及用于执行该方法的装置而使粉尘惰性化。

公开(公告)号：US07202146B2

公开(公告)日：2007-04-10

申请号：US11199603

申请日：2005-08-09

申请人： Rupert Krautbauer ,  Christoph Frey ,  Simon Zitzelsberger ,  Lothar Lehmann

发明人： Rupert Krautbauer ,  Christoph Frey ,  Simon Zitzelsberger ,  Lothar Lehmann

IPC分类号： H01L21/425 ,  H01L21/22 ,  H01L29/167

CPC分类号： H01L21/324 ,  H01L21/26506 ,  H01L21/26513

摘要： A process for producing doped semiconductor wafers from silicon, which contain an electrically active dopant, such as boron, phosphorus, arsenic or antimony, optionally are additionally doped with germanium and have a defined thermal conductivity, involves producing a single crystal from silicon and processing further to form semiconductor wafers, the thermal conductivity being established by selecting a concentration of the electrically active dopant and optionally a concentration of germanium. Semiconductor wafers produced from silicon by the process have specific properties with regard to thermal conductivity and resistivity.

摘要翻译： 含有硼，磷，砷或锑等电学活性掺杂剂的硅的掺杂半导体晶片的制造方法可另外掺入锗并具有规定的热导率，包括由硅制造单晶并进一步加工 为了形成半导体晶片，通过选择电活性掺杂剂的浓度和任选的锗浓度建立热导率。 通过该方法由硅制造的半导体晶片在热导率和电阻率方面具有特定的性质。

公开(公告)号：US20060035448A1

公开(公告)日：2006-02-16

申请号：US11199603

申请日：2005-08-09

申请人： Rupert Krautbauer ,  Christoph Frey ,  Simon Zitzelsberger ,  Lothar Lehmann

发明人： Rupert Krautbauer ,  Christoph Frey ,  Simon Zitzelsberger ,  Lothar Lehmann

IPC分类号： H01L21/74 ,  H01L21/425

CPC分类号： H01L21/324 ,  H01L21/26506 ,  H01L21/26513

摘要： A process for producing doped semiconductor wafers from silicon, which contain an electrically active dopant, such as boron, phosphorus, arsenic or antimony, optionally are additionally doped with germanium and have a defined thermal conductivity, involves producing a single crystal from silicon and processing further to form semiconductor wafers, the thermal conductivity being established by selecting a concentration of the electrically active dopant and optionally a concentration of germanium. Semiconductor wafers produced from silicon by the process have specific properties with regard to thermal conductivity and resistivity.

摘要翻译： 含有硼，磷，砷或锑等电学活性掺杂剂的硅的掺杂半导体晶片的制造方法可另外掺入锗并具有规定的热导率，包括由硅制造单晶并进一步加工 为了形成半导体晶片，通过选择电活性掺杂剂的浓度和任选的锗浓度建立热导率。 通过该方法由硅制造的半导体晶片在热导率和电阻率方面具有特定的性质。