发明申请
- 专利标题： Thin film transistor and manufacturing method thereof
- 专利标题（中）： 薄膜晶体管及其制造方法
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申请号： US12000593申请日： 2007-12-14
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公开(公告)号： US20080105921A1公开(公告)日： 2008-05-08
- 发明人: Yoshiharu Hirakata , Yukie Nemoto
- 申请人： Yoshiharu Hirakata , Yukie Nemoto
- 申请人地址： JP Atsugi-shi 243-0036
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi 243-0036
- 优先权： JP2003-076640 20030319
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/3205
摘要：
The present invention provides a step in which a channel-length of a TFT can be controlled with higher reproducibility. In addition, the present invention provides a step in which a short channel-length of the TFT can be manufactured. Further, the present invention provides a structure of the TFT in which a current-voltage characteristic can be improved. The present invention refers to a thin film transistor comprising a lamination layer wherein a first conductive film, a first insulating film and a second conductive film are sequentially laminated, a semiconductor film formed so as to be in contact with the side surface of the lamination layer, and a third conductive film covering the semiconductor film through a second insulating film. The first conductive film and the second conductive film are a source electrode and a drain electrode, and a region which is in contact with the first insulating film and the third conductive film is a channel forming region in semiconductor film, and the third conductive film is a gate electrode.
公开/授权文献
- US07923780B2 Thin film transistor and manufacturing method thereof 公开/授权日：2011-04-12
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