公开(公告)号：US20080105921A1

公开(公告)日：2008-05-08

申请号：US12000593

申请日：2007-12-14

申请人： Yoshiharu Hirakata ,  Yukie Nemoto

发明人： Yoshiharu Hirakata ,  Yukie Nemoto

IPC分类号： H01L29/78 ,  H01L21/3205

CPC分类号： H01L29/786 ,  H01L27/1214 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78642 ,  H01L29/78696

摘要： The present invention provides a step in which a channel-length of a TFT can be controlled with higher reproducibility. In addition, the present invention provides a step in which a short channel-length of the TFT can be manufactured. Further, the present invention provides a structure of the TFT in which a current-voltage characteristic can be improved. The present invention refers to a thin film transistor comprising a lamination layer wherein a first conductive film, a first insulating film and a second conductive film are sequentially laminated, a semiconductor film formed so as to be in contact with the side surface of the lamination layer, and a third conductive film covering the semiconductor film through a second insulating film. The first conductive film and the second conductive film are a source electrode and a drain electrode, and a region which is in contact with the first insulating film and the third conductive film is a channel forming region in semiconductor film, and the third conductive film is a gate electrode.

摘要翻译： 本发明提供了可以以更高的再现性来控制TFT的沟道长度的步骤。 此外，本发明提供了可以制造TFT的短沟道长度的步骤。 此外，本发明提供了可以提高电流 - 电压特性的TFT的结构。 本发明涉及一种薄膜晶体管，其包括层叠层，其中依次层叠第一导电膜，第一绝缘膜和第二导电膜，形成为与层叠层的侧表面接触的半导体膜 以及通过第二绝缘膜覆盖半导体膜的第三导电膜。 第一导电膜和第二导电膜是源电极和漏电极，与第一绝缘膜和第三导电膜接触的区域是半导体膜中的沟道形成区域，第三导电膜是 栅电极。

公开(公告)号：US08088655B2

公开(公告)日：2012-01-03

申请号：US13081525

申请日：2011-04-07

申请人： Yoshiharu Hirakata ,  Yukie Nemoto

发明人： Yoshiharu Hirakata ,  Yukie Nemoto

IPC分类号： H01L21/00

CPC分类号： H01L29/786 ,  H01L27/1214 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78642 ,  H01L29/78696

摘要： The present invention provides a step in which a channel-length of a TFT can be controlled with higher reproducibility. In addition, the present invention provides a step in which a short channel-length of the TFT can be manufactured. Further, the present invention provides a structure of the TFT in which a current-voltage characteristic can be improved. The present invention refers to a thin film transistor comprising a lamination layer wherein a first conductive film, a first insulating film and a second conductive film are sequentially laminated, a semiconductor film formed so as to be in contact with the side surface of the lamination layer, and a third conductive film covering the semiconductor film through a second insulating film. The first conductive film and the second conductive film are a source electrode and a drain electrode, and a region which is in contact with the first insulating film and the third conductive film is a channel forming region in semiconductor film, and the third conductive film is a gate electrode.

摘要翻译： 本发明提供了可以以更高的再现性来控制TFT的沟道长度的步骤。 此外，本发明提供了可以制造TFT的短沟道长度的步骤。 此外，本发明提供了可以提高电流 - 电压特性的TFT的结构。 本发明涉及一种薄膜晶体管，其包括依次层叠第一导电膜，第一绝缘膜和第二导电膜的层叠层，形成为与层叠层的侧面接触的半导体膜 以及通过第二绝缘膜覆盖半导体膜的第三导电膜。 第一导电膜和第二导电膜是源电极和漏电极，与第一绝缘膜和第三导电膜接触的区域是半导体膜中的沟道形成区域，第三导电膜是 栅电极。

公开(公告)号：US08399887B2

公开(公告)日：2013-03-19

申请号：US13336292

申请日：2011-12-23

申请人： Yoshiharu Hirakata ,  Yukie Nemoto

发明人： Yoshiharu Hirakata ,  Yukie Nemoto

IPC分类号： H01L27/108

CPC分类号： H01L29/786 ,  H01L27/1214 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78642 ,  H01L29/78696

摘要： The present invention provides a structure of the TFT in which a current-voltage characteristic can be improved. The present invention refers to a thin film transistor comprising a lamination layer wherein a first conductive film, a first insulating film and a second conductive film are sequentially laminated, a semiconductor film formed so as to be in contact with the side surface of the lamination layer, and a third conductive film covering the semiconductor film through a second insulating film. The first conductive film and the second conductive film are a source electrode and a drain electrode, and a region which is in contact with the first insulating film and the third conductive film is a channel forming region in semiconductor film, and the third conductive film is a gate electrode.

公开(公告)号：US07923780B2

公开(公告)日：2011-04-12

申请号：US12000593

申请日：2007-12-14

申请人： Yoshiharu Hirakata ,  Yukie Nemoto

发明人： Yoshiharu Hirakata ,  Yukie Nemoto

IPC分类号： H01L27/12

CPC分类号： H01L29/786 ,  H01L27/1214 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78642 ,  H01L29/78696

摘要： The present invention provides a step in which a channel-length of a TFT can be controlled with higher reproducibility. In addition, the present invention provides a step in which a short channel-length of the TFT can be manufactured. Further, the present invention provides a structure of the TFT in which a current-voltage characteristic can be improved. The present invention refers to a thin film transistor comprising a lamination layer wherein a first conductive film, a first insulating film and a second conductive film are sequentially laminated, a semiconductor film formed so as to be in contact with the side surface of the lamination layer, and a third conductive film covering the semiconductor film through a second insulating film. The first conductive film and the second conductive film are a source electrode and a drain electrode, and a region which is in contact with the first insulating film and the third conductive film is a channel forming region in semiconductor film, and the third conductive film is a gate electrode.

摘要翻译： 本发明提供了可以以更高的再现性来控制TFT的沟道长度的步骤。 此外，本发明提供了可以制造TFT的短沟道长度的步骤。 此外，本发明提供了可以提高电流 - 电压特性的TFT的结构。 本发明涉及一种薄膜晶体管，其包括层叠层，其中依次层叠第一导电膜，第一绝缘膜和第二导电膜，形成为与层叠层的侧表面接触的半导体膜 以及通过第二绝缘膜覆盖半导体膜的第三导电膜。 第一导电膜和第二导电膜是源电极和漏电极，与第一绝缘膜和第三导电膜接触的区域是半导体膜中的沟道形成区域，第三导电膜是 栅电极。

公开(公告)号：US07314784B2

公开(公告)日：2008-01-01

申请号：US10803092

申请日：2004-03-18

申请人： Yoshiharu Hirakata ,  Yukie Nemoto

发明人： Yoshiharu Hirakata ,  Yukie Nemoto

IPC分类号： H01L21/00

CPC分类号： H01L29/786 ,  H01L27/1214 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78642 ,  H01L29/78696

摘要： A channel-length of a TFT can be controlled with higher reproducibility, and a short channel-length of the TFT can be manufactured. Further, a structure of the TFT having an improved current-voltage characteristic is provided. A thin film transistor has a lamination layer where a first conductive film, a first insulating film and a second conductive film are sequentially laminated, a semiconductor film is formed so as to be in contact with the side surface of the lamination layer, and a third conductive film covers the semiconductor film through a second insulating film. The first conductive film and the second conductive film are a source electrode and a drain electrode, a region which is in contact with the first insulating film and the third conductive film is a channel forming region in the semiconductor film, and the third conductive film is a gate electrode.

摘要翻译： 可以以更高的再现性来控制TFT的沟道长度，并且可以制造TFT的短沟道长度。 此外，提供了具有改善的电流 - 电压特性的TFT的结构。 薄膜晶体管具有层叠层，其中第一导电膜，第一绝缘膜和第二导电膜顺序地层叠，形成半导体膜以与层压层的侧表面接触，并且第三 导电膜通过第二绝缘膜覆盖半导体膜。 第一导电膜和第二导电膜是源电极和漏电极，与第一绝缘膜和第三导电膜接触的区域是半导体膜中的沟道形成区域，第三导电膜是 栅电极。

公开(公告)号：US07622863B2

公开(公告)日：2009-11-24

申请号：US10873290

申请日：2004-06-23

申请人： Satoshi Seo ,  Harue Nakashima ,  Yukie Nemoto

发明人： Satoshi Seo ,  Harue Nakashima ,  Yukie Nemoto

IPC分类号： H05B33/02 ,  H05B33/00

CPC分类号： H01L27/3267 ,  G09G3/3216 ,  G09G3/3225 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2300/0439 ,  G09G2300/0809 ,  H01L27/3286

摘要： The present invention provides a light-emitting device whose volume is small and that has plural display screens, and a personal digital assistant that realizes higher added value by using the same. A light-emitting device of the present invention has a plurality of light-emitting elements in a pixel, and these light-emitting elements emit light in a different direction from each other and a pixel driving element is provided in one of the light-emitting elements. The light-emitting device can display in both front and back sides and independently display images on the both sides. Further, it can provide a higher aperture ratio, which is obtained by adding the aperture ratios of the both sides. Furthermore, it is also possible to see different images on the both sides of an electronic device using a display device of the present invention. Moreover, weight saving and thinning of electronic devices can be realized.

摘要翻译： 本发明提供一种体积小且具有多个显示屏的发光装置和通过使用该显示屏实现更高附加值的个人数字助理。 本发明的发光装置在像素中具有多个发光元件，这些发光元件在彼此不同的方向上发光，并且像素驱动元件设置在发光 元素。 发光装置可以在前后两面显示，并且在两侧独立地显示图像。 此外，可以提供通过增加两侧的开口率而获得的较高的开口率。 此外，也可以使用本发明的显示装置在电子设备的两侧看到不同的图像。 此外，可以实现电子装置的减重和减薄。

公开(公告)号：US07368306B2

公开(公告)日：2008-05-06

申请号：US11347283

申请日：2006-02-06

申请人： Hideto Ohnuma ,  Yukie Nemoto

发明人： Hideto Ohnuma ,  Yukie Nemoto

IPC分类号： H01L21/00

CPC分类号： H01J9/025 ,  H01J1/3044

摘要： It is an object to provide techniques for forming a field emission device of a field emission display device with the use of an inexpensive large-sized substrate according to the process that enables improving productivity.A field emission device according to the present invention includes a cathode electrode formed on an insulating surface of a substrate and a convex electron emission portion formed at a surface of the cathode electrode, and the cathode electrode and the electron emission portion include the same semiconductor film. The electron emission portion has a conical shape or a whiskers shape.

摘要翻译： 本发明的目的是提供根据能够提高生产率的方法，通过使用便宜的大尺寸基板来形成场发射显示装置的场致发射装置的技术。 根据本发明的场发射器件包括形成在衬底的绝缘表面上的阴极电极和形成在阴极电极的表面处的凸电子发射部分，并且阴极电极和电子发射部分包括相同的半导体膜 。 电子发射部分具有圆锥形状或晶须形状。

公开(公告)号：US08994086B2

公开(公告)日：2015-03-31

申请号：US12904313

申请日：2010-10-14

申请人： Shunpei Yamazaki ,  Hiroko Abe ,  Yukie Nemoto ,  Ryoji Nomura ,  Mikio Yukawa

发明人： Shunpei Yamazaki ,  Hiroko Abe ,  Yukie Nemoto ,  Ryoji Nomura ,  Mikio Yukawa

IPC分类号： H01L21/3205 ,  H01L21/822 ,  B82Y10/00 ,  G11C13/00 ,  G11C17/14 ,  G11C17/16 ,  G11C17/18 ,  H01L27/06 ,  H01L27/24 ,  H01L45/00 ,  H01L27/12

CPC分类号： H01L27/2463 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C17/143 ,  G11C17/16 ,  G11C17/18 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L21/8221 ,  H01L23/66 ,  H01L27/0688 ,  H01L27/1266 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/283 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1213 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L51/0098 ,  H01L2223/6677 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

摘要翻译： 本发明提供了一种非易失性，易于制造并且可另外写入的半导体器件。 本发明的半导体器件包括多个晶体管，用作晶体管的源极布线或漏极布线的导电层，以及与多个晶体管之一重叠的存储元件，以及用作 天线。 存储元件包括第一导电层，有机化合物层和相变层，以及依次层叠的第二导电层。 用作天线的导电层和用作多个晶体管的源极布线或漏极布线的导电层设置在同一层上。

公开(公告)号：US07816721B2

公开(公告)日：2010-10-19

申请号：US11632049

申请日：2005-11-09

申请人： Shunpei Yamazaki ,  Hiroko Abe ,  Yukie Nemoto ,  Ryoji Nomura ,  Mikio Yukawa

发明人： Shunpei Yamazaki ,  Hiroko Abe ,  Yukie Nemoto ,  Ryoji Nomura ,  Mikio Yukawa

IPC分类号： H01L21/3205

CPC分类号： H01L27/2463 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C17/143 ,  G11C17/16 ,  G11C17/18 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L21/8221 ,  H01L23/66 ,  H01L27/0688 ,  H01L27/1266 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/283 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1213 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L51/0098 ,  H01L2223/6677 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

摘要翻译： 本发明提供了一种非易失性，易于制造并且可另外写入的半导体器件。 本发明的半导体器件包括多个晶体管，用作晶体管的源极布线或漏极布线的导电层，以及与多个晶体管之一重叠的存储元件，以及用作 天线。 存储元件包括第一导电层，有机化合物层和相变层，以及依次层叠的第二导电层。 用作天线的导电层和用作多个晶体管的源极布线或漏极布线的导电层设置在同一层上。

公开(公告)号：US07566902B2

公开(公告)日：2009-07-28

申请号：US10839340

申请日：2004-05-06

申请人： Harue Nakashima ,  Satoshi Seo ,  Yukie Nemoto

发明人： Harue Nakashima ,  Satoshi Seo ,  Yukie Nemoto

IPC分类号： H01L31/00

CPC分类号： G09G3/3225 ,  G09G2300/0426 ,  G09G2300/0465 ,  G09G2300/0847 ,  G09G2300/0861 ,  H01L27/3267

摘要： The present invention provides a light-emitting device that can independently display images of both front and back sides, in a light emitting device that can display in the both sides and also provides a light-emitting device in which the aperture ratio of both or either of front and back displays increases. A light-emitting device has a structure in which a first light-emitting element and a second light-emitting element that are adjacent to each other are arranged in matrix; wherein the first light-emitting element can emit light to a first side of a substrate and the second light-emitting element can emit light to a second side that is opposite to the first side of the substrate. And light-emission of the first light-emitting element to the second side is shielded and light-emission of the second light-emitting element to the first side is shielded. In each light-emitting element, since a side opposite to a light-emitting side has a film having a light shielding effect, light-emission can be performed separately in each side.

摘要翻译： 本发明提供一种发光装置，其能够独立地显示正面和背面两者的图像，在可显示在两侧的发光装置中，并且还提供一种发光装置，其中两者或两者的开口率 前后显示器增加。 发光装置具有彼此相邻的第一发光元件和第二发光元件排列成矩阵状的结构， 其中所述第一发光元件可以向衬底的第一侧发光，并且所述第二发光元件可以向与所述衬底的所述第一侧相对的第二侧发光。 并且第一发光元件向第二侧的发光被屏蔽，并且第二发光元件对第一侧的发光被屏蔽。 在各发光元件中，由于与发光侧相反的一侧具有遮光效果的膜，因此可以在各侧分别进行发光。