A semiconductor memory device and a layout structure of word line contacts, in which the semiconductor memory device includes an active region, a plurality of memory cells, and word line contacts. The active region is disposed in a first direction as a length direction on a semiconductor substrate and is used as a word line. The plurality of memory cells are disposed in the first direction on the active region and are each constructed of one variable resistance device and one diode device. In the word line contacts, at least one each is disposed between respective units, wherein each unit is constructed of predetermined numbers of memory cells on the active region. A bridge effect, such as a short-circuit between adjacent word lines, can be prevented or substantially reduced.