发明申请
- 专利标题： WET ETCHING METHOD USING ULTRAVIOLET LIGHT AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 使用紫外光的湿蚀刻方法和制造半导体器件的方法
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申请号： US11964794申请日： 2007-12-27
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公开(公告)号： US20080113518A1公开(公告)日： 2008-05-15
- 发明人: Satoshi Kume , Nobuyuki Hishinuma , Hiroshi Sugahara
- 申请人： Satoshi Kume , Nobuyuki Hishinuma , Hiroshi Sugahara
- 申请人地址： JP Tokyo 100-6334 JP Tokyo-to 100-0004
- 专利权人： RENESAS TECHNOLOGY CORP.,USHIO DENKI KABUSHIKI KAISHA
- 当前专利权人： RENESAS TECHNOLOGY CORP.,USHIO DENKI KABUSHIKI KAISHA
- 当前专利权人地址： JP Tokyo 100-6334 JP Tokyo-to 100-0004
- 优先权： JP2003-081776 20030325
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A substrate supporting film to be etched is held on a rotating stage. Ultraviolet light having a wavelength of 200 nm or shorter radiated from first lamps irradiates the film in air, thereby removing an organic coatings from the film and making the surface of the film hydrophilic. A chemical solution is applied to the hydrophilic film while rotating the substrate. Ultraviolet light having a wavelength longer than 200 nm is radiated from second lamps and onto the film through the chemical solution.
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