发明申请
- 专利标题： Method for manufacturing a semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US11602066申请日： 2006-11-20
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公开(公告)号： US20080116494A1公开(公告)日： 2008-05-22
- 发明人: Matthias Goldbach , Dietmar Henke , Sven Schmidbauer
- 申请人： Matthias Goldbach , Dietmar Henke , Sven Schmidbauer
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L21/265 ; H01L21/4763
摘要：
The invention relates to a method for manufacturing a semiconductor device. A silicon substrate comprising at least one structured area in which a dopant is implanted is provided. A contact modifying material is provided on the surface of the at least one structured area. A silicide layer is formed on the surface of the at least one structured area, the silicide layer comprising at least one of titan silicide, titan nitride silicide and cobalt silicide.
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