发明申请
- 专利标题: Phase Shifter with Photonic Band Gap Structure Using Ferroelectric Thin Film
- 专利标题(中): 使用铁电薄膜的光子带隙结构的移相器
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申请号: US11722299申请日: 2005-12-20
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公开(公告)号: US20080116995A1公开(公告)日: 2008-05-22
- 发明人: Young-Tae Kim , Han-Cheol Ryu , Min-Hwan Kwak , Seung-Eon Moon , Su-Jae Lee , Kwang-Yong Kang
- 申请人: Young-Tae Kim , Han-Cheol Ryu , Min-Hwan Kwak , Seung-Eon Moon , Su-Jae Lee , Kwang-Yong Kang
- 申请人地址: KR Daejeon
- 专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址: KR Daejeon
- 优先权: KR10-2004-0108981 20041220
- 国际申请: PCT/KR05/04390 WO 20051220
- 主分类号: H01P1/18
- IPC分类号: H01P1/18
摘要:
Provided are a phase shifter with a photonic band gap (PBG) structure using a ferroelectric thin film. The phase shifter includes a microstrip transmission line acting as a microwave input/output line and a plurality of tunable capacitors arranged in the microstrip transmission line at regular intervals. Electrodes disposed on a substrate apply DC voltages to the plurality of tunable capacitors. Radio frequency (RF) chokes and quarter wavelength radial-stubs are connected between the electrodes and the microstrip transmission line in order to prevent high frequency signals from flowing into a DC bias terminal. A plurality of PBGS are periodically arrayed on a ground plane of the substrate.
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