发明申请
- 专利标题: METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND PRODUCTS MADE THEREBY
- 专利标题(中): 制造半导体器件及其制品的方法
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申请号: US11870561申请日: 2007-10-11
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公开(公告)号: US20080121933A1公开(公告)日: 2008-05-29
- 发明人: Tetsuya Hayashi , Masakatsu Hoshi , Hideaki Tanaka , Shigeharu Yamagami
- 申请人: Tetsuya Hayashi , Masakatsu Hoshi , Hideaki Tanaka , Shigeharu Yamagami
- 申请人地址: JP Yokohama-shi
- 专利权人: NISSAN MOTOR CO., LTD.
- 当前专利权人: NISSAN MOTOR CO., LTD.
- 当前专利权人地址: JP Yokohama-shi
- 优先权: JP2006-316807 20061124
- 主分类号: H01L29/778
- IPC分类号: H01L29/778 ; H01L21/04 ; H01L21/336
摘要:
Methods of manufacturing a semiconductor device and resulting products. The semiconductor device includes a semiconductor substrate, a hetero semiconductor region hetero-adjoined with the semiconductor substrate, a gate insulation layer contacting the semiconductor substrate and a heterojunction of the hetero semiconductor region, a gate electrode formed on the gate insulation layer, an electric field alleviation region spaced apart from a heterojunction driving end of the heterojunction that contacts the gate insulation layer by a predetermined distance and contacting the semiconductor substrate and the gate insulation layer, a source electrode contacting the hetero semiconductor region and a drain electrode contacting the semiconductor substrate. A mask layer is formed on the hetero semiconductor region, and the electric field alleviation region and the heterojunction driving end are formed by using at least a portion of the first mask layer.