发明申请
US20080122010A1 TRANSISTOR HAVING SOURCE/DRAIN REGION ONLY UNDER SIDEWALL SPACER EXCEPT FOR CONTACTS AND METHOD
审中-公开
具有源/漏区的晶体管仅在接线端子和方法之外
- 专利标题： TRANSISTOR HAVING SOURCE/DRAIN REGION ONLY UNDER SIDEWALL SPACER EXCEPT FOR CONTACTS AND METHOD
- 专利标题（中）： 具有源/漏区的晶体管仅在接线端子和方法之外
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申请号： US11555826申请日： 2006-11-02
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公开(公告)号： US20080122010A1公开(公告)日： 2008-05-29
- 发明人: Brent A. Anderson , Andres Bryant , William F. Clark , Edward J. Nowak
- 申请人： Brent A. Anderson , Andres Bryant , William F. Clark , Edward J. Nowak
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/84
摘要：
A transistor and related method are disclosed. The transistor may include a gate, a sidewall spacer formed along the gate, and a source/drain region positioned only under the sidewall spacer except for a portion at which a contact is positioned. The transistor may be ultra-low power and sub-threshold voltage or near sub-threshold voltage. The transistor may exhibit at least two times reduction in outer fringe capacitance (Cof).
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