发明申请
- 专利标题： Gate Drive Circuit
- 专利标题（中）： 栅极驱动电路
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申请号： US12019032申请日： 2008-01-24
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公开(公告)号： US20080122497A1公开(公告)日： 2008-05-29
- 发明人: Katsumi ISHIKAWA , Masahiro Nagasu , Dai Tsugawa
- 申请人： Katsumi ISHIKAWA , Masahiro Nagasu , Dai Tsugawa
- 申请人地址： JP Chiyoda-ku
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2006-270502 20061002
- 主分类号： H03B1/00
- IPC分类号： H03B1/00
摘要：
A subject of the present invention is to reduce noise caused by ringing or the like while reducing turn-on power loss of the element and reverse recovery loss of the diode in a switching circuit of a power semiconductor element to which a SiC diode having small recovery current is connected in parallel.A means for solving the problem is to detect gate voltage and/or collector voltage of the power semiconductor switching element and change gate drive voltage in several stages based on the detected value.
公开/授权文献
- US07737761B2 Gate drive circuit with reduced switching loss and noise 公开/授权日：2010-06-15
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