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    Gate drive circuit with reduced switching loss and noise
    1.
    发明授权
    Gate drive circuit with reduced switching loss and noise 失效
    栅极驱动电路具有降低的开关损耗和噪声

    公开(公告)号：US07737761B2

    公开(公告)日：2010-06-15

    申请号：US12019032

    申请日：2008-01-24

    申请人： Katsumi Ishikawa ,  Masahiro Nagasu ,  Dai Tsugawa

    发明人： Katsumi Ishikawa ,  Masahiro Nagasu ,  Dai Tsugawa

    IPC分类号： H03K17/16 ,  H03K17/30

    CPC分类号： H03K17/567 ,  H03K17/163 ,  H03K17/168 ,  H03K2217/0036

    摘要： A subject of the present invention is to reduce noise caused by ringing or the like while reducing turn-on power loss of the element and reverse recovery loss of the diode in a switching circuit of a power semiconductor element to which a SiC diode having small recovery current is connected in parallel.A means for solving the problem is to detect gate voltage and/or collector voltage of the power semiconductor switching element and change gate drive voltage in several stages based on the detected value.

    摘要翻译： 本发明的目的是减少振荡等引起的噪声，同时降低元件的导通功率损耗并且在具有小恢复的SiC二极管的功率半导体元件的开关电路中的二极管的反向恢复损耗 电流并联。 解决该问题的手段是基于检测值来检测功率半导体开关元件的栅极电压和/或集电极电压并且以几个阶段改变栅极驱动电压。

    Gate Drive Circuit
    3.
    发明申请
    Gate Drive Circuit 失效
    栅极驱动电路

    公开(公告)号：US20080122497A1

    公开(公告)日：2008-05-29

    申请号：US12019032

    申请日：2008-01-24

    申请人： Katsumi ISHIKAWA ,  Masahiro Nagasu ,  Dai Tsugawa

    发明人： Katsumi ISHIKAWA ,  Masahiro Nagasu ,  Dai Tsugawa

    IPC分类号： H03B1/00

    CPC分类号： H03K17/567 ,  H03K17/163 ,  H03K17/168 ,  H03K2217/0036

    摘要： A subject of the present invention is to reduce noise caused by ringing or the like while reducing turn-on power loss of the element and reverse recovery loss of the diode in a switching circuit of a power semiconductor element to which a SiC diode having small recovery current is connected in parallel.A means for solving the problem is to detect gate voltage and/or collector voltage of the power semiconductor switching element and change gate drive voltage in several stages based on the detected value.

    摘要翻译： 本发明的目的是减少振荡等引起的噪声，同时降低元件的导通功率损耗并且在具有小恢复的SiC二极管的功率半导体元件的开关电路中的二极管的反向恢复损耗 电流并联。 解决该问题的手段是基于检测值来检测功率半导体开关元件的栅极电压和/或集电极电压并且以几个阶段改变栅极驱动电压。

    POWER CONVERTER FOR TRACTION CONTROL AND TRANSPORTATION SYSTEM
    5.
    发明申请
    POWER CONVERTER FOR TRACTION CONTROL AND TRANSPORTATION SYSTEM 审中-公开
    电力转换器用于跟踪控制和运输系统

    公开(公告)号：US20100327837A1

    公开(公告)日：2010-12-30

    申请号：US12818229

    申请日：2010-06-18

    申请人： Dai TSUGAWA ,  Katsumi Ishikawa

    发明人： Dai TSUGAWA ,  Katsumi Ishikawa

    IPC分类号： G05F1/10

    CPC分类号： H02M1/32 ,  H01L2224/48091 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02M7/5387 ,  H01L2924/00014 ,  H01L2924/00

    摘要： The following problem associated with a semiconductor device of silicon or the like having low band gap is solved by temperature estimation using voltage drop in such a semiconductor device having low accuracy and this complicates a circuit for temperature detection suitable for practical use or a configuration for implementing a detection system. A power converter provided with an inverter circuit includes a semiconductor device whose band gap is larger than that of silicon and which has a range in which the temperature coefficient of voltage drop during conduction is positive. The power converter further includes a measurement condition setting circuit. This circuit adjusts the timing of the following measurement values used for temperature estimation at a device temperature estimation circuit to each other so that a measurement value of a voltage measurement circuit and a measurement value of a current measurement circuit become data obtained by measurement at the same time.

    摘要翻译： 与具有低带隙的硅等的半导体器件相关联的以下问题通过使用这种具有低精度的这种半导体器件中的电压降的温度估计来解决，并且这使得适用于实际使用的温度检测电路或用于实现的配置复杂化 检测系统。 设置有逆变器电路的电力转换器包括其带隙大于硅的带隙的半导体器件，并且具有传导期间的电压降温度系数为正的范围。 功率转换器还包括测量条件设置电路。 该电路将用于设备温度估计电路的温度估计的以下测量值的定时相互调整，使得电压测量电路的测量值和电流测量电路的测量值成为通过测量获得的数据 时间。