Invention Application
US20080124857A1 CMOS DEVICE WITH METAL AND SILICIDE GATE ELECTRODES AND A METHOD FOR MAKING IT
有权
具有金属和硅化物电极的CMOS器件及其制造方法
- Patent Title: CMOS DEVICE WITH METAL AND SILICIDE GATE ELECTRODES AND A METHOD FOR MAKING IT
- Patent Title (中): 具有金属和硅化物电极的CMOS器件及其制造方法
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Application No.: US11556025Application Date: 2006-11-02
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Publication No.: US20080124857A1Publication Date: 2008-05-29
- Inventor: Justin K. Brask , Mark L. Doczy , Jack Kavalieros , Matthew V. Metz , Chris E. Barns , Uday Shah , Suman Datta , Christopher D. Thomas , Robert S. Chau
- Applicant: Justin K. Brask , Mark L. Doczy , Jack Kavalieros , Matthew V. Metz , Chris E. Barns , Uday Shah , Suman Datta , Christopher D. Thomas , Robert S. Chau
- Main IPC: H01L21/77
- IPC: H01L21/77 ; H01L21/762 ; H01L21/04
Abstract:
A semiconductor device and a method for forming it are described. The semoiconductor device comprises a metal NMOS gate electrode that is formed on a first part of a substrate, and a silicide PMOS gate electrode that is formed on a second part of the substrate.
Public/Granted literature
- US07883951B2 CMOS device with metal and silicide gate electrodes and a method for making it Public/Granted day:2011-02-08
Information query
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