发明申请
US20080124857A1 CMOS DEVICE WITH METAL AND SILICIDE GATE ELECTRODES AND A METHOD FOR MAKING IT
有权
具有金属和硅化物电极的CMOS器件及其制造方法
- 专利标题： CMOS DEVICE WITH METAL AND SILICIDE GATE ELECTRODES AND A METHOD FOR MAKING IT
- 专利标题（中）： 具有金属和硅化物电极的CMOS器件及其制造方法
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申请号： US11556025申请日： 2006-11-02
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公开(公告)号： US20080124857A1公开(公告)日： 2008-05-29
- 发明人: Justin K. Brask , Mark L. Doczy , Jack Kavalieros , Matthew V. Metz , Chris E. Barns , Uday Shah , Suman Datta , Christopher D. Thomas , Robert S. Chau
- 申请人： Justin K. Brask , Mark L. Doczy , Jack Kavalieros , Matthew V. Metz , Chris E. Barns , Uday Shah , Suman Datta , Christopher D. Thomas , Robert S. Chau
- 主分类号： H01L21/77
- IPC分类号： H01L21/77 ; H01L21/762 ; H01L21/04
摘要：
A semiconductor device and a method for forming it are described. The semoiconductor device comprises a metal NMOS gate electrode that is formed on a first part of a substrate, and a silicide PMOS gate electrode that is formed on a second part of the substrate.
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