发明申请
- 专利标题: MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
- 专利标题(中): 磁电效应元件和磁记忆
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申请号: US12019657申请日: 2008-01-25
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公开(公告)号: US20080130176A1公开(公告)日: 2008-06-05
- 发明人: Tadashi KAI , Masahiko Nakayama , Sumio Ikegawa , Yoshiaki Fukuzumi , Yoshihisa Iwata
- 申请人: Tadashi KAI , Masahiko Nakayama , Sumio Ikegawa , Yoshiaki Fukuzumi , Yoshihisa Iwata
- 申请人地址: JP Minato-ku
- 专利权人: KABUSHHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2005-207499 20050715
- 主分类号: G11B5/33
- IPC分类号: G11B5/33
摘要:
A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
公开/授权文献
- US07525837B2 Magnetoresistive effect element and magnetic memory 公开/授权日:2009-04-28
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