发明申请
US20080130176A1 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
磁电效应元件和磁记忆

MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
摘要:
A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
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