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公开(公告)号：US20080130176A1
公开(公告)日：2008-06-05
申请号：US12019657
申请日：2008-01-25
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译： 磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。 参考层设置在第一表面上并具有固定的磁化方向。 磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。 矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。 第一突出部从第一长边突出的位置从中心向第一短边移动。 第二突出部从第二长边突出的位置从中心向第二短边移动。
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公开(公告)号：US20070013015A1
公开(公告)日：2007-01-18
申请号：US11378358
申请日：2006-03-20
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译： 磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。 参考层设置在第一表面上并具有固定的磁化方向。 磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。 矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。 第一突出部从第一长边突出的位置从中心向第一短边移动。 第二突出部从第二长边突出的位置从中心向第二短边移动。
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公开(公告)号：US07525837B2
公开(公告)日：2009-04-28
申请号：US12019657
申请日：2008-01-25
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译： 磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。 参考层设置在第一表面上并具有固定的磁化方向。 磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。 矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。 第一突出部从第一长边突出的位置从中心向第一短边移动。 第二突出部从第二长边突出的位置从中心向第二短边移动。
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公开(公告)号：US07414880B2
公开(公告)日：2008-08-19
申请号：US11378358
申请日：2006-03-20
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译： 磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。 参考层设置在第一表面上并具有固定的磁化方向。 磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。 矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。 第一突出部从第一长边突出的位置从中心向第一短边移动。 第二突出部从第二长边突出的位置从中心向第二短边移动。
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公开(公告)号：US20080261331A1
公开(公告)日：2008-10-23
申请号：US11935923
申请日：2007-11-06
申请人： Yoshihisa Iwata , Yoshiaki Fukuzumi , Tadashi Kai
发明人： Yoshihisa Iwata , Yoshiaki Fukuzumi , Tadashi Kai
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic memory device comprising, a magneto-resistance effect element that is provided at an intersection between a first write line and a second write line. And the magneto-resistance effect element having, an easy axis that extends in a direction of extension of the first write line, and a first conductive layer for electrical connection to the magneto-resistance effect element, the first conductive layer having sides which are in flush with sides of the magneto-resistance effect element.
摘要翻译： 一种磁存储器件，包括：设置在第一写入线和第二写入线之间的交叉点处的磁阻效应元件。 并且，所述磁阻效应元件具有沿所述第一写入线的延伸方向延伸的容易轴和用于与所述磁阻效应元件电连接的第一导电层，所述第一导电层具有位于 与磁阻效应元件的两侧齐平。
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公开(公告)号：US07592189B2
公开(公告)日：2009-09-22
申请号：US11935923
申请日：2007-11-06
申请人： Yoshihisa Iwata , Yoshiaki Fukuzumi , Tadashi Kai
发明人： Yoshihisa Iwata , Yoshiaki Fukuzumi , Tadashi Kai
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic memory device comprising, a magneto-resistance effect element that is provided at an intersection between a first write line and a second write line. And the magneto-resistance effect element having, an easy axis that extends in a direction of extension of the first write line, and a first conductive layer for electrical connection to the magneto-resistance effect element, the first conductive layer having sides which are in flush with sides of the magneto-resistance effect element.
摘要翻译： 一种磁存储器件，包括：设置在第一写入线和第二写入线之间的交叉点处的磁阻效应元件。 并且，所述磁阻效应元件具有沿所述第一写入线的延伸方向延伸的容易轴和用于与所述磁阻效应元件电连接的第一导电层，所述第一导电层具有位于 与磁阻效应元件的两侧齐平。
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公开(公告)号：US20050242384A1
公开(公告)日：2005-11-03
申请号：US10933247
申请日：2004-09-03
申请人： Yoshihisa Iwata , Yoshiaki Fukuzumi , Tadashi Kai
发明人： Yoshihisa Iwata , Yoshiaki Fukuzumi , Tadashi Kai
IPC分类号： H01L27/105 , G11C11/00 , G11C11/16 , H01L21/8246 , H01L27/108 , H01L27/22 , H01L29/76 , H01L29/94 , H01L31/119 , H01L43/08 , H01L43/12
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic memory device comprising, a magneto-resistance effect element that is provided at an intersection between a first write line and a second write line. And the magneto-resistance effect element having, an easy axis that extends in a direction of extension of the first write line, and a first conductive layer for electrical connection to the magneto-resistance effect element, the first conductive layer having sides which are in flush with sides of the magneto-resistance effect element.
摘要翻译： 一种磁存储器件，包括：设置在第一写入线和第二写入线之间的交叉点处的磁阻效应元件。 并且，所述磁阻效应元件具有沿所述第一写入线的延伸方向延伸的容易轴和用于与所述磁阻效应元件电连接的第一导电层，所述第一导电层具有位于 与磁阻效应元件的两侧齐平。
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公开(公告)号：US07326982B2
公开(公告)日：2008-02-05
申请号：US10933247
申请日：2004-09-03
申请人： Yoshihisa Iwata , Yoshiaki Fukuzumi , Tadashi Kai
发明人： Yoshihisa Iwata , Yoshiaki Fukuzumi , Tadashi Kai
IPC分类号： H01L27/108 , H01L29/94 , H01L31/119 , H01I29/76
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic memory device comprising, a magneto-resistance effect element that is provided at an intersection between a first write line and a second write line. And the magneto-resistance effect element having, an easy axis that extends in a direction of extension of the first write line, and a first conductive layer for electrical connection to the magneto-resistance effect element, the first conductive layer having sides which are in flush with sides of the magneto-resistance effect element.
摘要翻译： 一种磁存储器件，包括：设置在第一写入线和第二写入线之间的交叉点处的磁阻效应元件。 并且，所述磁阻效应元件具有沿所述第一写入线的延伸方向延伸的容易轴和用于与所述磁阻效应元件电连接的第一导电层，所述第一导电层具有位于 与磁阻效应元件的两侧齐平。
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公开(公告)号：US08472242B2
公开(公告)日：2013-06-25
申请号：US12748785
申请日：2010-03-29
IPC分类号： G11C11/14
CPC分类号： G11C11/1673 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1693
摘要： A magnetoresistive effect memory of an aspect of the present invention including a magnetoresistive effect element including a first magnetic layer having an invariable magnetization direction, a second magnetic layer having a variable magnetization direction, and an interlayer provided between the first magnetic layer and the second magnetic layer, and a reading circuit which passes a pulse-shaped read current through the magnetoresistive effect element to read data stored in the magnetoresistive effect element, wherein the pulse width of the read current is shorter than a period from an initial state to a cooperative coherent precession movement of magnetizations included in the second magnetic layer.
摘要翻译： 本发明的磁阻效应存储器包括磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层，以及设置在第一磁性层和第二磁性层之间的中间层 以及读取电路，其使脉冲形读取电流通过磁阻效应元件以读取存储在磁阻效应元件中的数据，其中读取电流的脉冲宽度短于从初始状态到协作相干的周期 包括在第二磁性层中的磁化的进动运动。
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公开(公告)号：US20100246244A1
公开(公告)日：2010-09-30
申请号：US12748785
申请日：2010-03-29
CPC分类号： G11C11/1673 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1693
摘要： A magnetoresistive effect memory of an aspect of the present invention including a magnetoresistive effect element including a first magnetic layer having an invariable magnetization direction, a second magnetic layer having a variable magnetization direction, and an interlayer provided between the first magnetic layer and the second magnetic layer, and a reading circuit which passes a pulse-shaped read current through the magnetoresistive effect element to read data stored in the magnetoresistive effect element, wherein the pulse width of the read current is shorter than a period from an initial state to a cooperative coherent precession movement of magnetizations included in the second magnetic layer.
摘要翻译： 本发明的磁阻效应存储器包括磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层，以及设置在第一磁性层和第二磁性层之间的中间层 以及读取电路，其使脉冲形读取电流通过磁阻效应元件以读取存储在磁阻效应元件中的数据，其中读取电流的脉冲宽度短于从初始状态到协作相干的周期 包括在第二磁性层中的磁化的进动运动。
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