发明申请
- 专利标题: Back-illuminated image sensor and method of fabricating the same
- 专利标题(中): 背照式图像传感器及其制造方法
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申请号: US11987607申请日: 2007-12-03
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公开(公告)号: US20080131588A1公开(公告)日: 2008-06-05
- 发明人: Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon , Doo-Won Kwon
- 申请人: Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon , Doo-Won Kwon
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2006-0121671 20061204
- 主分类号: B05D5/12
- IPC分类号: B05D5/12
摘要:
A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.