公开(公告)号：US20110291219A1

公开(公告)日：2011-12-01

申请号：US13106369

申请日：2011-05-12

申请人： Doo-Won KWON

发明人： Doo-Won KWON

IPC分类号： H01L31/02

CPC分类号： H01L27/1464 ,  H01L27/1463 ,  H01L27/14654 ,  H01L27/14656 ,  H01L27/14672 ,  H01L27/14674 ,  H01L31/062 ,  H01L31/103

摘要： A backside illumination image sensor, a method of fabricating the same, and an electronic system including the backside illumination image sensor, the backside illumination image sensor including a semiconductor substrate, the semiconductor substrate having an upper surface and a lower surface; photodiodes in the semiconductor substrate; and metal interconnections below the semiconductor substrate, wherein each of the photodiodes includes a N-type region, a lower P-type region below the N-type region, and an upper P-type region on the N-type region.

摘要翻译： 背面照明图像传感器，其制造方法以及包括背面照明图像传感器的电子系统，所述背面照明图像传感器包括半导体衬底，所述半导体衬底具有上表面和下表面; 半导体衬底中的光电二极管; 和金属互连，其中每个光电二极管包括N型区域，N型区域下方的P型区域和N型区域上的P型区域。

公开(公告)号：US20070072431A1

公开(公告)日：2007-03-29

申请号：US11527473

申请日：2006-09-27

申请人： Chang-Sup Mun ,  Woo-Gwan Shim ,  Han-Ku Cho ,  Chang-Ki Hong ,  Doo-Won Kwon

发明人： Chang-Sup Mun ,  Woo-Gwan Shim ,  Han-Ku Cho ,  Chang-Ki Hong ,  Doo-Won Kwon

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02057 ,  H01L21/02082

摘要： A method for cleaning a substrate on which a silicon layer and a silicon germanium layer are formed and exposed, and method for fabricating a semiconductor device using the cleaning method are disclosed. The cleaning method comprises preparing a semiconductor substrate on which a silicon layer and a silicon germanium layer are formed and exposed; and performing a first cleaning sub-process that uses a first cleaning solution to remove a native oxide layer from the semiconductor substrate. The cleaning method further comprises performing a second cleaning sub-process on the semiconductor substrate after performing the first cleaning sub-process, wherein the second cleaning sub-process comprises using a second cleaning solution. In addition, the second cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), and deionized water (H2O), and the second cleaning solution comprises at least 200 times more deionized water (H2O) than ammonium hydroxide (NH4OH) by volume.

摘要翻译： 公开了一种用于清洁其上形成和暴露硅层和硅锗层的衬底的方法，以及使用该清洁方法制造半导体器件的方法。 该清洗方法包括：制备半导体衬底，在其上形成和暴露硅层和硅锗层; 以及执行使用第一清洁溶液从半导体衬底去除自然氧化物层的第一清洁子过程。 清洁方法还包括在执行第一清洁子过程之后在半导体衬底上执行第二清洁子处理，其中第二清洁子处理包括使用第二清洁溶液。 此外，第二清洗溶液包括氢氧化铵（NH 4 OH），过氧化氢（H 2 O 2 O 2）和去离子水（ H 2 O），并且第二清洁溶液包含比氢氧化铵（NH 4 O 2）少至少200倍的去离子水（H 2 O 2 O） OH）。

公开(公告)号：US08836068B2

公开(公告)日：2014-09-16

申请号：US13106369

申请日：2011-05-12

申请人： Doo-Won Kwon

发明人： Doo-Won Kwon

IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L31/062

CPC分类号： H01L27/1464 ,  H01L27/1463 ,  H01L27/14654 ,  H01L27/14656 ,  H01L27/14672 ,  H01L27/14674 ,  H01L31/062 ,  H01L31/103

摘要： A backside illumination image sensor, a method of fabricating the same, and an electronic system including the backside illumination image sensor, the backside illumination image sensor including a semiconductor substrate, the semiconductor substrate having an upper surface and a lower surface; photodiodes in the semiconductor substrate; and metal interconnections below the semiconductor substrate, wherein each of the photodiodes includes a N-type region, a lower P-type region below the N-type region, and an upper P-type region on the N-type region.

摘要翻译： 背面照明图像传感器，其制造方法以及包括背面照明图像传感器的电子系统，所述背面照明图像传感器包括半导体衬底，所述半导体衬底具有上表面和下表面; 半导体衬底中的光电二极管; 和金属互连，其中每个光电二极管包括N型区域，N型区域下方的P型区域和N型区域上的P型区域。

公开(公告)号：US20090315137A1

公开(公告)日：2009-12-24

申请号：US12547046

申请日：2009-08-25

申请人： DOO-WON KWON ,  JONG-RYEOL YOO ,  CHANG-ROK MOON

发明人： DOO-WON KWON ,  JONG-RYEOL YOO ,  CHANG-ROK MOON

IPC分类号： H01L31/02

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

摘要： A semiconductor device includes: a trench device isolating region formed in a substrate to define a photodiode active region; a channel stop impurity region formed in the substrate contacting the device isolating region, wherein the channel stop impurity region surrounds a bottom and a sidewall of the device isolating region; and a photodiode formed within the photodiode active region.

摘要翻译： 半导体器件包括：形成在衬底中以限定光电二极管有源区的沟槽器件隔离区; 形成在与所述器件隔离区接触的衬底中的沟道阻挡杂质区，其中所述沟道阻挡杂质区围绕所述器件隔离区的底部和侧壁; 以及形成在光电二极管活性区域内的光电二极管。

公开(公告)号：US20080150057A1

公开(公告)日：2008-06-26

申请号：US11951070

申请日：2007-12-05

申请人： Yun-Ki LEE ,  Duck-Hyung LEE ,  Chang-Rok MOON ,  Sung-Ho HWANG ,  Doo-Won KWON ,  Gil-Sang YOO ,  Seung-Hun SHIN

发明人： Yun-Ki LEE ,  Duck-Hyung LEE ,  Chang-Rok MOON ,  Sung-Ho HWANG ,  Doo-Won KWON ,  Gil-Sang YOO ,  Seung-Hun SHIN

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

摘要： An image sensor and a method of manufacturing the same are disclosed. An image sensor is formed by forming a photoelectric transformation element at a front surface of a semiconductor substrate in an active pixel sensor region and in an optical black region of the semiconductor substrate, subjecting a surface of the semiconductor substrate opposite the front surface to a removal process to create a back surface of the semiconductor substrate, and forming a light blocking film pattern on the back surface in the optical black region. The light blocking film pattern includes an organic material.

摘要翻译： 公开了一种图像传感器及其制造方法。 通过在半导体衬底的有源像素传感器区域和半导体衬底的光学黑色区域中的半导体衬底的前表面处形成光电转换元件来形成图像传感器，使得与前表面相对的半导体衬底的表面被去除 处理以形成半导体衬底的背面，并在光学黑色区域的后表面上形成遮光膜图案。 遮光膜图案包括有机材料。

公开(公告)号：US20080131588A1

公开(公告)日：2008-06-05

申请号：US11987607

申请日：2007-12-03

申请人： Sung-Ho Hwang ,  Duck-Hyung Lee ,  Chang-Rok Moon ,  Doo-Won Kwon

发明人： Sung-Ho Hwang ,  Duck-Hyung Lee ,  Chang-Rok Moon ,  Doo-Won Kwon

IPC分类号： B05D5/12

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/02165

摘要： A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.

摘要翻译： 背照式图像传感器可以包括其中设置有光电二极管的基板; 在所述基板的第一表面上的绝缘层; 绝缘层中的互连层; 在所述基板和所述绝缘层之间的抗反射层; 在所述基板的与所述第一表面相对的第二表面上的多个滤色器; 和滤色片上的微透镜。 因为防反射层可以在基板和层间电介质层之间，所以可以减少穿过基板并到达基板与层间绝缘层之间的界面的光的反射率。

公开(公告)号：US08058180B2

公开(公告)日：2011-11-15

申请号：US12032048

申请日：2008-02-15

申请人： Doo-Won Kwon ,  Hyung-Ho Ko ,  Chang-Sup Mun ,  Woo-Gwan Shim ,  Im-Soo Park ,  Yu-Kyung Kim ,  Jeong-Nam Han

发明人： Doo-Won Kwon ,  Hyung-Ho Ko ,  Chang-Sup Mun ,  Woo-Gwan Shim ,  Im-Soo Park ,  Yu-Kyung Kim ,  Jeong-Nam Han

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/02052

摘要： This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.

摘要翻译： 本发明提供制造半导体器件的方法，其中在半导体衬底上形成合金层以形成衬底结构，该方法包括使用稀氨水溶液和过氧化物混合物（APM）进行清洗和/或湿蚀刻处理步骤 在衬底结构上。

公开(公告)号：US20080038865A1

公开(公告)日：2008-02-14

申请号：US11878829

申请日：2007-07-27

申请人： Doo-won Kwon

发明人： Doo-won Kwon

IPC分类号： H01L21/02

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14609 ,  H01L31/035281

摘要： Provided is a method of manufacturing an image sensor which may include forming a plurality of photoelectric converters on a semiconductor substrate, forming a silicon nitride (SiN) film on the plurality of photoelectric converters, supplying plasma gas including hydrogen to the SiN film, and performing a heat treatment on the semiconductor substrate.

摘要翻译： 提供一种制造图像传感器的方法，其可以包括在半导体衬底上形成多个光电转换器，在多个光电转换器上形成氮化硅（SiN）膜，向SiN膜提供包括氢的等离子体气体，并且执行 在半导体衬底上的热处理。

公开(公告)号：US07595213B2

公开(公告)日：2009-09-29

申请号：US11517238

申请日：2006-09-07

申请人： Doo-Won Kwon ,  Jong-Ryeol Yoo ,  Chang-Rok Moon

发明人： Doo-Won Kwon ,  Jong-Ryeol Yoo ,  Chang-Rok Moon

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

摘要： A semiconductor device includes: a trench device isolating region formed in a substrate to define a photodiode active region; a channel stop impurity region formed in the substrate contacting the device isolating region, wherein the channel stop impurity region surrounds a bottom and a sidewall of the device isolating region; and a photodiode formed within the photodiode active region.

摘要翻译： 半导体器件包括：形成在衬底中以限定光电二极管有源区的沟槽器件隔离区; 形成在与所述器件隔离区接触的衬底中的沟道阻挡杂质区，其中所述沟道阻挡杂质区围绕所述器件隔离区的底部和侧壁; 以及形成在光电二极管活性区域内的光电二极管。

公开(公告)号：US07435301B2

公开(公告)日：2008-10-14

申请号：US11104829

申请日：2005-04-13

申请人： Chang-Sup Mun ,  Doo-Won Kwon ,  Hyung-Ho Ko ,  Chang-Ki Hong ,  Sang-Jun Choi

发明人： Chang-Sup Mun ,  Doo-Won Kwon ,  Hyung-Ho Ko ,  Chang-Ki Hong ,  Sang-Jun Choi

IPC分类号： C23G1/16

CPC分类号： H01L21/02052 ,  C11D1/66 ,  C11D1/72 ,  C11D3/044 ,  C11D11/0047 ,  H01L21/3081 ,  Y10S134/902

摘要： Disclosed are a cleaning solution for preventing damage of a silicon germanium layer when cleaning a semiconductor device including the silicon germanium layer and a cleaning method using the same. The cleaning solution of a silicon germanium layer includes from about 0.01 to about 2.5 percent by weight of a non-ionic surfactant with respect to 100 percent by weight of the cleaning solution, about 0.05 to about 5.0 percent by weight of an alkaline compound with respect to the cleaning solution and a remaining amount of pure water. The damage to an exposed silicon germanium layer can be prevented when cleaning a silicon substrate having a silicon germanium layer. Impurities present on the surface portion of the silicon germanium layer can be effectively removed.

摘要翻译： 公开了一种用于在清洁包括硅锗层的半导体器件时的防止硅锗层损坏的清洁溶液以及使用其的清洁方法。 硅锗层的清洁溶液包括约0.01至约2.5重量％的非离子表面活性剂相对于100重量％的清洁溶液，约0.05至约5.0重量％的碱性化合物，相对于 到清洁溶液和剩余量的纯水。 当清洁具有硅锗层的硅衬底时，可以防止暴露的硅锗层的损坏。 可以有效地除去存在于硅锗层的表面部分上的杂质。