发明申请
US20080135838A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME
审中-公开
薄膜晶体管，其制造方法以及包括其的有机发光二极管显示装置
- 专利标题： THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME
- 专利标题（中）： 薄膜晶体管，其制造方法以及包括其的有机发光二极管显示装置
-
申请号： US11951525申请日： 2007-12-06
-
公开(公告)号： US20080135838A1公开(公告)日： 2008-06-12
- 发明人: HYE-HYANG PARK , Byoung-Deog Choi
- 申请人： HYE-HYANG PARK , Byoung-Deog Choi
- 申请人地址： KR Suwon-si
- 专利权人： Samsung SDI Co., Ltd
- 当前专利权人： Samsung SDI Co., Ltd
- 当前专利权人地址： KR Suwon-si
- 优先权： KR2006-123044 20061206
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L33/00 ; H01L21/04
摘要：
Provided are a thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode display device (OLED display device) including the thin film transistor having improved characteristics of the thin film transistor. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate; a gate insulating layer disposed on the semiconductor layer, and formed of a thermal oxide layer patterned to correspond to the semiconductor layer; a gate electrode disposed on the gate insulating layer, and disposed to correspond to a predetermined region of the semiconductor layer; an interlayer insulating layer disposed on an entire surface of the substrate; and source and drain electrodes electrically connected to the semiconductor layer.
信息查询
IPC分类:
