发明申请
- 专利标题： SEMICONDUCTOR DEVICE HAVING A TRENCH GATE AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 具有高温闸门的半导体器件及其制造方法
-
申请号： US12021969申请日： 2008-01-29
-
公开(公告)号： US20080135907A1公开(公告)日： 2008-06-12
- 发明人: Jeng-Ping Lin , Pei-Ing Lee
- 申请人： Jeng-Ping Lin , Pei-Ing Lee
- 申请人地址： TW TAOYUAN
- 专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址： TW TAOYUAN
- 优先权： TWTW94145039 20051219
- 主分类号： H01L27/108
- IPC分类号： H01L27/108
摘要：
A method of fabricating a semiconductor device having a trench gate is provided. First, a semiconductor substrate having a trench etch mask thereon is provided. The semiconductor substrate is etched to form a first trench having a first depth using the trench etch mask as a shield. Impurities are doped into the semiconductor substrate through the first trench to form a doped region. The doped region and the semiconductor substrate underlying the first trench are etched to form a second trench having a second depth greater than the first depth, wherein the second trench has a sidewall and a bottom. A gate insulating layer is formed on the sidewall and the bottom of the second trench. A trench gate is formed in the second trench.
公开/授权文献
信息查询
IPC分类:
