发明申请
US20080136030A1 Semiconductor device comprising a doped metal comprising main electrode
审中-公开
半导体器件包括包含主电极的掺杂金属
- 专利标题： Semiconductor device comprising a doped metal comprising main electrode
- 专利标题（中）： 半导体器件包括包含主电极的掺杂金属
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申请号： US11977027申请日： 2007-10-23
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公开(公告)号： US20080136030A1公开(公告)日： 2008-06-12
- 发明人: Shou-Zen Chang , Jorge Adrian Kittl , HongYu Yu , Anne Lauwers , Anabela Veloso
- 申请人： Shou-Zen Chang , Jorge Adrian Kittl , HongYu Yu , Anne Lauwers , Anabela Veloso
- 申请人地址： BE Leuven US TX Dallas TW HsinChu
- 专利权人： Interuniversitair MicroelektronicaCentrum (IMEC),Texas Instruments Inc.,Taiwan Semiconductor Manufacturing Company Ltd.
- 当前专利权人： Interuniversitair MicroelektronicaCentrum (IMEC),Texas Instruments Inc.,Taiwan Semiconductor Manufacturing Company Ltd.
- 当前专利权人地址： BE Leuven US TX Dallas TW HsinChu
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/425
摘要：
A semiconductor device is provided comprising a main electrode (4) and a dielectric (3) in contact with the main electrode (4), the main electrode (4) comprising a material having a work function and a work function modulating element (6) for modulating the work function of the material of the main electrode (4) towards a predetermined value. The main electrode (4) furthermore comprises a diffusion preventing dopant element (5) for preventing diffusion of the work function modulating element (6) towards and/or into the dielectric (3). Methods for forming such a semiconductor device are also described.
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