发明申请
- 专利标题： INTEGRATED CIRCUIT SYSTEM WITH METAL AND SEMI-CONDUCTING GATE
- 专利标题（中）： 具有金属和半导体门的集成电路系统
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申请号： US11611856申请日： 2006-12-16
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公开(公告)号： US20080142873A1公开(公告)日： 2008-06-19
- 发明人: Angela T. Hui , Mark S. Chang , Kuo-Tung Chang , Scott A. Bell
- 申请人： Angela T. Hui , Mark S. Chang , Kuo-Tung Chang , Scott A. Bell
- 申请人地址： US CA Sunnyvale US CA Sunnyvale
- 专利权人： SPANSION LLC,ADVANCED MICRO DEVICES, INC.
- 当前专利权人： SPANSION LLC,ADVANCED MICRO DEVICES, INC.
- 当前专利权人地址： US CA Sunnyvale US CA Sunnyvale
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/28
摘要：
A method for forming an integrated circuit system is provided including forming a semi-conducting layer over a substrate, forming a spacer stack having a gap filler adjacent to the semi-conducting layer and a inter-layer dielectric over the gap filler, forming a transition layer having a recess over the semi-conducting layer and adjacent to the spacer stack, and forming a metal layer in the recess.
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