发明申请
US20080142878A1 Charge trap memory device and a method of manufacturing the same
审中-公开
电荷陷阱记忆装置及其制造方法
- 专利标题: Charge trap memory device and a method of manufacturing the same
- 专利标题(中): 电荷陷阱记忆装置及其制造方法
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申请号: US11978577申请日: 2007-10-30
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公开(公告)号: US20080142878A1公开(公告)日: 2008-06-19
- 发明人: Sang-moo Choi , Young-Kwan Cha , Kwang-soo Seol , Sang-Jin Park , Sang-min Shin , Ju-hee Park
- 申请人: Sang-moo Choi , Young-Kwan Cha , Kwang-soo Seol , Sang-Jin Park , Sang-min Shin , Ju-hee Park
- 专利权人: SAMSUNG ELECTRONICS CO., LTD
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD
- 优先权: KR10-2006-0129679 20061218
- 主分类号: H01L29/792
- IPC分类号: H01L29/792 ; H01L21/3205
摘要:
Provided are a charge trap memory device and a method of manufacturing the same. The charge trap memory device may comprise a gate structure including a plurality of metal oxide nanodots discontinuously arranged as a charge trap site on a substrate.