发明申请
- 专利标题： Methods and systems for memory devices
- 专利标题（中）： 存储器件的方法和系统
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申请号： US11639935申请日： 2006-12-15
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公开(公告)号： US20080144391A1公开(公告)日： 2008-06-19
- 发明人: Nian Yang , Yonggang Wu , Tien-Chun Yang
- 申请人： Nian Yang , Yonggang Wu , Tien-Chun Yang
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 主分类号： G11C16/10
- IPC分类号： G11C16/10
摘要：
One embodiment of the invention relates to a method for accessing a memory cell. In this method, at least one bit of the memory cell is erased. After erasing the at least one bit, a soft program operation is performed to bias the memory cell thereby improving the reliability of data stored in the memory cell.Other methods and systems are also disclosed.
公开/授权文献
- US07746706B2 Methods and systems for memory devices 公开/授权日：2010-06-29
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