发明申请
- 专利标题: Cyclic Chemical Vapor Deposition of Metal-Silicon Containing Films
- 专利标题(中): 含金属硅的循环化学气相沉积
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申请号: US11949868申请日: 2007-12-04
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公开(公告)号: US20080145535A1公开(公告)日: 2008-06-19
- 发明人: Xinjian Lei , Hareesh Thridandam , Manchao Xiao , Heather Regina Bowen , Thomas Richard Gaffney
- 申请人: Xinjian Lei , Hareesh Thridandam , Manchao Xiao , Heather Regina Bowen , Thomas Richard Gaffney
- 申请人地址: US PA Allentown
- 专利权人: AIR PRODUCTS AND CHEMICALS, INC.
- 当前专利权人: AIR PRODUCTS AND CHEMICALS, INC.
- 当前专利权人地址: US PA Allentown
- 主分类号: C23C16/06
- IPC分类号: C23C16/06
摘要:
A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02(R0═SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.