摘要:
Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.
摘要:
A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R1 is selected from a C3-C10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C6-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R1 in formula A can be combined into a cyclic group and R2 representing a single bond, (CH2)n chain, a ring, C3-C10 branched alkyl, SiR2, or SiH2.
摘要:
Described herein are methods to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of: R1nR2mSi(NR3R4)4-n-m; and, a cyclic silazane of (R1R2SiNR3)p, where R1 is an alkenyl or an aromatic, such as vinyl, allyl, and phenyl; R2, R3, and R4 are selected from H, alkyl with C1-C10, linear, branched, or cyclic, an alkenyl with C2-C10 linear, branched, or cyclic, and aromatic; n=1-3, m=0-2; p=3-4.
摘要翻译:本文描述了形成二氧化硅膜的方法,其使用热CVD法,ALD法或循环CVD法在HF溶液中具有极低的湿蚀刻速率,其中硅前体选自以下之一:R1nR2mSi(NR3R4)4-n-m; 和(R 1 R 2 SiNR 3)p的环状硅氮烷,其中R 1是烯基或芳族,例如乙烯基,烯丙基和苯基; R2,R3和R4选自H为具有C1-C10,直链,支链或环状的烷基,具有C2-C10直链,支链或环状和芳族的烯基; n = 1-3,m = 0-2; p = 3-4。
摘要:
Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.
摘要:
A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02 (R0═SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.
摘要:
A process for purifying monoterpenes, including the steps of: providing a monoterpene comprising alpha terpinene of about 90% or greater purity and comprising an oxygen-containing impurity compound selected from the group consisting of 1,8-cineole, 1,4,-cineole, and mixtures thereof; providing an activated silica gel preparative chromatographic column; contacting the monoterpene with the column, wherein the oxygen-containing impurity compounds are retained on the column; recovering monterpenes depleted of oxygen-containing impurity compounds from the column by applying a pressure above atmospheric from a gas source without the use of a solvent; and removing the oxygen-containing impurity compounds by contacting the column with an alcohol.
摘要:
Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: XmR1nHpSi(NR2R3)4-m-n-p I wherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1-C10 alkyl, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; R3 is selected from a branched C3-C10 alkyl group, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.
摘要:
A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R1 is selected from a C3-C10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C6-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R1 in formula A can be combined into a cyclic group and R2 representing a single bond, (CH2)n chain, a ring, C3-C10 branched alkyl, SiR2, or SiH2.
摘要:
A method of removing trace levels of arsenic-containing impurities from raw triethylphosphate (TEPO) is disclosed. The method uses adsorption, or adsorption followed by a flash distillation. The method comprises contacting raw triethylphosphate (TEPO) with an adsorbent which selectively adsorbs the arsenic-containing impurities in the raw triethylphosphate (TEPO). The adsorbent is a base promoted alumina containing adsorbent represented by a formula: ZxWy; where x is the weight percentage of Z in the adsorbent ranging from 30% to 99.999%; y is the weight percentage of W in the adsorbent, and x+y=100%; Z is selected from the group consisting of alumina (Al2O3), magnesium-alumina based layered double hydroxide (MgO—Al2O3), alumina-zeolite, and mixtures thereof; and W is selected from the group consisting of at least one basic metal oxide, at least one basic metal carbonate, and mixtures thereof. The method will result in a final triethylphosphate (TEPO) with a few ppb to less than 1 ppb arsenic containing impurities.
摘要翻译:公开了从原料三乙基磷酸盐(TEPO)中除去痕量砷含量杂质的方法。 该方法使用吸附或吸附,然后进行快速蒸馏。 该方法包括将原料三乙基磷酸盐(TEPO)与选择性吸附原料三乙基磷酸盐(TEPO)中的含砷杂质的吸附剂接触。 吸附剂是由式ZxWy表示的碱性促进氧化铝的吸附剂。 其中x是吸附剂中Z的重量百分数,范围为30%至99.999%; y是吸附剂中W的重量百分数,x + y = 100%; Z选自氧化铝(Al2O3),镁 - 氧化铝基层状双氢氧化物(MgO-Al 2 O 3),氧化铝 - 沸石及其混合物; W选自至少一种碱金属氧化物,至少一种碱金属碳酸盐及其混合物。 该方法将产生具有几ppb至少于1ppb含砷杂质的最终三乙基磷酸酯(TEPO)。
摘要:
A process to stabilize nitrogen-containing or oxygen-containing organosilane from acid catalyzed attack and retard the resulting decomposition is disclosed. Such organosilanes, and the nitrogen-containing organosilane in particular, with a least one Si—H or N—H group are susceptible to this type of product decomposition. Treatment with a weakly basic ion exchange media retards this decomposition by scavenging the anions or acids that are attacking the Si—H group. Dilute exposures to these anions can initiate significant decomposition and effect product stability and long-term shelf-life for semiconductor processing for the use of silicon oxide, silicon oxynitride and silicon nitride films.