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公开(公告)号：US07678422B2
公开(公告)日：2010-03-16
申请号：US11949868
申请日：2007-12-04
申请人： Xinjian Lei , Hareesh Thridandam , Manchao Xiao , Heather Regina Bowen , Thomas Richard Gaffney
发明人： Xinjian Lei , Hareesh Thridandam , Manchao Xiao , Heather Regina Bowen , Thomas Richard Gaffney
CPC分类号： C23C16/34 , C23C16/45553
摘要： A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02 (R0═SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.
摘要翻译： 一种在衬底上沉积金属氮化硅的方法，包括：在加热的衬底上吸附金属酰胺，清除未吸附的金属酰胺，将具有一个或多个Si-H 3片段的含硅源与被加热的衬底接触，与 吸附的金属酰胺，其中所述含硅源具有一个或多个选自下列中的一个或多个的一个或多个的R 3 Si-NRO 2（R 0 = SiH 3，R 1，R 2或R 2，定义如下）：其中式中的R和R 1 代表通常具有2至约10个碳原子的脂族基团，例如支链烷基，具有式R中R和R 1的环烷基也可结合成环状基团，并且R 2表示单键，（CH 2）n，环或 SiH2，并且清除未反应的含硅源。
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公开(公告)号：US20080145535A1
公开(公告)日：2008-06-19
申请号：US11949868
申请日：2007-12-04
申请人： Xinjian Lei , Hareesh Thridandam , Manchao Xiao , Heather Regina Bowen , Thomas Richard Gaffney
发明人： Xinjian Lei , Hareesh Thridandam , Manchao Xiao , Heather Regina Bowen , Thomas Richard Gaffney
IPC分类号： C23C16/06
CPC分类号： C23C16/34 , C23C16/45553
摘要： A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02(R0═SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.
摘要翻译： 一种在衬底上沉积金属氮化硅的方法，包括：在加热的衬底上吸附金属酰胺，清除未吸附的金属酰胺，与含有一个或多个Si-H 3 N 3片段的含硅源接触 加热的底物与吸附的金属酰胺反应，其中含硅源具有一个或多个H 3 Si-NR O 2 O 2， （R 0〜S 3 H 3，R 1，R 1或R 2）定义如下）选自 由下式中的一个或多个组成：其中式中的R和R 1表示通常具有2至约10个碳原子的脂族基团，例如支链烷基，具有R和R 1的环烷基 式A中也可以组合成环状基团，R 2表示单键，（CH 2 CH 2）n， 环或SiH 2 H 2，并且清除未反应的含硅源。
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3.发明申请公开(公告)号：US20120128897A1
公开(公告)日：2012-05-24
申请号：US13114287
申请日：2011-05-24
CPC分类号： C07F7/025 , C23C16/345 , C23C16/401
摘要： Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.
摘要翻译： 这里描述的是形成介电膜的前体和方法。 一方面，提供了具有下式I的硅前体：其中R 1独立地选自氢，直链或支链C 1至C 6烷基，直链或支链C 2至C 6烯基，直链或支链C 2至C 6炔基 C1-C6烷氧基，C1-C6二烷基氨基和吸电子基，n是选自0,1,2,3,4和5的数; R 2独立地选自氢，直链或支链C 1至C 6烷基，直链或支链C 2至C 6烯基，直链或支链C 2至C 6炔基，C 1至C 6烷氧基，C 1至C 6二烷基氨基，C 6至 C 10芳基，直链或支链C 1至C 6氟化烷基和C 4至C 10环烷基。
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4.发明授权公开(公告)号：US08912353B2
公开(公告)日：2014-12-16
申请号：US13114287
申请日：2011-05-24
CPC分类号： C07F7/025 , C23C16/345 , C23C16/401
摘要： Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.
摘要翻译： 这里描述的是形成介电膜的前体和方法。 一方面，提供了具有下式I的硅前体：其中R 1独立地选自氢，直链或支链C 1至C 6烷基，直链或支链C 2至C 6烯基，直链或支链C 2至C 6炔基 C1-C6烷氧基，C1-C6二烷基氨基和吸电子基，n是选自0,1,2,3,4和5的数; R 2独立地选自氢，直链或支链C 1至C 6烷基，直链或支链C 2至C 6烯基，直链或支链C 2至C 6炔基，C 1至C 6烷氧基，C 1至C 6二烷基氨基，C 6至 C 10芳基，直链或支链C 1至C 6氟化烷基和C 4至C 10环烷基。
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5.发明授权Process for producing silicon and oxide films from organoaminosilane precursors 有权用于从有机氨基硅烷前体制备硅和氧化膜的方法公开(公告)号：US08530361B2
公开(公告)日：2013-09-10
申请号：US12976041
申请日：2010-12-22
IPC分类号： H01L21/31
CPC分类号： H01L21/02211 , C07F7/025 , C23C16/402 , C23C16/45553 , H01L21/02164 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/0228 , H01L21/3145 , H01L21/31608 , H01L21/31633
摘要： A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R1 is selected from a C3-C10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C6-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R1 in formula A can be combined into a cyclic group and R2 representing a single bond, (CH2)n chain, a ring, C3-C10 branched alkyl, SiR2, or SiH2.
摘要翻译： 本文描述了使用有机氨基硅烷在基板上沉积含硅膜的方法。 有机基氨基硅烷由下式表示：其中R选自具有或不具有取代基的C1-C10直链，支链或环状饱和或不饱和的烷基; 具有或不具有取代基的C 5 -C 10芳族基团，具有或不具有取代基的C 3 -C 10杂环基或具有或不具有取代基的式C中的甲硅烷基，其选自C 3 -C 10直链，支链，环状，饱和或 有或没有取代基的不饱和烷基; 具有或不具有取代基的C 6 -C 10芳族基团，具有或不具有取代基的C 3 -C 10杂环基，氢原子，具有取代基的甲硅烷基，并且其中式A中的R和R可以组合成环状基团，并且R 2表示 单键，（CH 2）n链，环，C 3 -C 10支链烷基，SiR 2或SiH 2。
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6.发明申请公开(公告)号：US20130078392A1
公开(公告)日：2013-03-28
申请号：US13622117
申请日：2012-09-18
申请人： Manchao Xiao , Xinjian Lei , Mark Leonard O'Neill , Bing Han , Ronald Martin Pearlstein , Haripin Chandra , Heather Regina Bowen , Agnes Derecskei-Kovacs
发明人： Manchao Xiao , Xinjian Lei , Mark Leonard O'Neill , Bing Han , Ronald Martin Pearlstein , Haripin Chandra , Heather Regina Bowen , Agnes Derecskei-Kovacs
IPC分类号： C07F7/02
CPC分类号： C07F7/025 , C07F7/12 , C23C16/402 , C23C16/45536 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02219 , H01L21/0228 , H01L21/02532 , H01L21/0262
摘要： Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: XmR1nHpSi(NR2R3)4-m-n-p I wherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1-C10 alkyl, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; R3 is selected from a branched C3-C10 alkyl group, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.
摘要翻译： 这里描述的是形成膜的前体和方法。 一方面，提供了具有式I的前体：XmR1nHpSi（NR2R3）4-m-n-p1其中X选自Cl，Br，I; R 1选自直链或支链C 1 -C 10烷基，C 2 -C 12烯基，C 2 -C 12炔基，C 4 -C 10环烷基和C 6 -C 10芳基; R2选自直链或支链C1-C10烷基，C3-C12烯基，C3-C12炔基，C4-C10环烷基和C6-C10芳基; R3选自支链C 3 -C 10烷基，C 3 -C 12烯基，C 3 -C 12炔基，C 4 -C 10环烷基和C 6 -C 10芳基; m为1或2; n为0,1或2; p为0,1或2; 并且m + n + p小于4，其中R2和R3连接或未连接形成环。
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7.发明申请Process for Producing Silicon and Oxide Films from Organoaminosilane Precursors 有权从有机氨基硅烷前体生产硅和氧化物膜的方法公开(公告)号：US20110262642A1
公开(公告)日：2011-10-27
申请号：US12976041
申请日：2010-12-22
CPC分类号： H01L21/02211 , C07F7/025 , C23C16/402 , C23C16/45553 , H01L21/02164 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/0228 , H01L21/3145 , H01L21/31608 , H01L21/31633
摘要： A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R1 is selected from a C3-C10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C6-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R1 in formula A can be combined into a cyclic group and R2 representing a single bond, (CH2)n chain, a ring, C3-C10 branched alkyl, SiR2, or SiH2.
摘要翻译： 本文描述了使用有机氨基硅烷在基板上沉积含硅膜的方法。 有机基氨基硅烷由下式表示：其中R选自具有或不具有取代基的C1-C10直链，支链或环状饱和或不饱和的烷基; 具有或不具有取代基的C 5 -C 10芳族基团，具有或不具有取代基的C 3 -C 10杂环基或具有或不具有取代基的式C中的甲硅烷基，其选自C 3 -C 10直链，支链，环状，饱和或 有或没有取代基的不饱和烷基; 具有或不具有取代基的C 6 -C 10芳族基团，具有或不具有取代基的C 3 -C 10杂环基，氢原子，具有取代基的甲硅烷基，并且其中式A中的R和R可以组合成环状基团，并且R 2表示 单键，（CH 2）n链，环，C 3 -C 10支链烷基，SiR 2或SiH 2。
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8.发明授权Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes 有权使用氨基乙烯基硅烷沉积二氧化硅或氧化硅膜的方法公开(公告)号：US08460753B2
公开(公告)日：2013-06-11
申请号：US12964266
申请日：2010-12-09
申请人： Manchao Xiao , Liu Yang , Kirk Scott Cuthill , Heather Regina Bowen , Bing Han , Mark Leonard O'Neill
发明人： Manchao Xiao , Liu Yang , Kirk Scott Cuthill , Heather Regina Bowen , Bing Han , Mark Leonard O'Neill
IPC分类号： C23C16/40
CPC分类号： C23C16/401 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02222 , H01L21/02271 , H01L21/02274 , H01L21/0228
摘要： Described herein are methods to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of: R1nR2mSi(NR3R4)4-n-m; and, a cyclic silazane of (R1R2SiNR3)p, where R1 is an alkenyl or an aromatic, such as vinyl, allyl, and phenyl; R2, R3, and R4 are selected from H, alkyl with C1-C10, linear, branched, or cyclic, an alkenyl with C2-C10 linear, branched, or cyclic, and aromatic; n=1-3, m=0-2; p=3-4.
摘要翻译： 本文描述了形成二氧化硅膜的方法，其使用热CVD法，ALD法或循环CVD法在HF溶液中具有极低的湿蚀刻速率，其中硅前体选自以下之一：R1nR2mSi（NR3R4）4-n-m; 和（R 1 R 2 SiNR 3）p的环状硅氮烷，其中R 1是烯基或芳族，例如乙烯基，烯丙基和苯基; R2，R3和R4选自H为具有C1-C10，直链，支链或环状的烷基，具有C2-C10直链，支链或环状和芳族的烯基; n = 1-3，m = 0-2; p = 3-4。
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公开(公告)号：US20120148745A1
公开(公告)日：2012-06-14
申请号：US12964266
申请日：2010-12-09
申请人： Manchao Xiao , Liu Yang , Kirk Scott Cuthill , Heather Regina Bowen , Bing Han , Mark Leonard O'Neill
发明人： Manchao Xiao , Liu Yang , Kirk Scott Cuthill , Heather Regina Bowen , Bing Han , Mark Leonard O'Neill
CPC分类号： C23C16/401 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02222 , H01L21/02271 , H01L21/02274 , H01L21/0228
摘要： This invention related to method to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of: R1nR2mSi(NR3R4)4-n-m; and, a cyclic silazane of (R1R2SiNR3)p, where R1 is an alkenyl or an aromatic, such as vinyl, allyl, and phenyl; R2, R3, and R4 are selected from H, alkyl with C1-C10, linear, branched, or cyclic, an alkenyl with C2-C10 linear, branched, or cyclic, and aromatic; n=1-3, m=0-2; p=3-4.
摘要翻译： 本发明涉及使用热CVD法，ALD法或循环CVD法在HF溶液中具有非常低的湿蚀刻速率的二氧化硅膜的方法，其中硅前体选自以下之一：R1nR2mSi（NR3R4）4-nm ; 和（R 1 R 2 SiNR 3）p的环状硅氮烷，其中R 1是烯基或芳族，例如乙烯基，烯丙基和苯基; R2，R3和R4选自H为具有C1-C10，直链，支链或环状的烷基，具有C2-C10直链，支链或环状和芳族的烯基; n = 1-3，m = 0-2; p = 3-4。
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公开(公告)号：US07442822B2
公开(公告)日：2008-10-28
申请号：US11514650
申请日：2006-09-01
IPC分类号： C07F7/10
CPC分类号： C07F7/20
摘要： A process to stabilize nitrogen-containing or oxygen-containing organosilane from acid catalyzed attack and retard the resulting decomposition is disclosed. Such organosilanes, and the nitrogen-containing organosilane in particular, with a least one Si—H or N—H group are susceptible to this type of product decomposition. Treatment with a weakly basic ion exchange media retards this decomposition by scavenging the anions or acids that are attacking the Si—H group. Dilute exposures to these anions can initiate significant decomposition and effect product stability and long-term shelf-life for semiconductor processing for the use of silicon oxide, silicon oxynitride and silicon nitride films.
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