发明申请
US20080150006A1 Using implanted poly-1 to improve charging protection in dual-poly process
有权
使用植入poly-1改善双重聚合过程中的充电保护
- 专利标题: Using implanted poly-1 to improve charging protection in dual-poly process
- 专利标题(中): 使用植入poly-1改善双重聚合过程中的充电保护
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申请号: US11724726申请日: 2007-03-16
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公开(公告)号: US20080150006A1公开(公告)日: 2008-06-26
- 发明人: Ming-Sang Kwan , Bradley Marc Davis , Jean Yee-Mei Yang , Zhizheng Liu , Yi He
- 申请人: Ming-Sang Kwan , Bradley Marc Davis , Jean Yee-Mei Yang , Zhizheng Liu , Yi He
- 专利权人: Spansion LLC
- 当前专利权人: Spansion LLC
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L29/792
摘要:
The present invention pertains to implementing a dual poly process in forming a transistor based memory device. The process allows a first polysilicon layer to be selectively doped subsequent to deposition of the second polysilicon layer. The doping increases the conductivity of the first polysilicon layer which can achieve a more robust charging protection for multi-bit core array and a more uniform distribution of charge.