发明申请
- 专利标题： INTEGRATED CIRCUIT SYSTEM WITH MEMORY SYSTEM
- 专利标题（中）： 具有存储器系统的集成电路系统
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申请号： US11958646申请日： 2007-12-18
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公开(公告)号： US20080150011A1公开(公告)日： 2008-06-26
- 发明人: Simon Siu-Sing Chan , Lei Xue , YouSeok Suh , Amol Ramesh Joshi , Hidehiko Shiraiwa , Harpreet Sachar , Kuo-Tung Chang , Connie Pin Chin Wang , Paul R. Besser , Shenqing Fang , Meng Ding , Takashi Orimoto , Wei Zheng , Fred TK Cheung
- 申请人： Simon Siu-Sing Chan , Lei Xue , YouSeok Suh , Amol Ramesh Joshi , Hidehiko Shiraiwa , Harpreet Sachar , Kuo-Tung Chang , Connie Pin Chin Wang , Paul R. Besser , Shenqing Fang , Meng Ding , Takashi Orimoto , Wei Zheng , Fred TK Cheung
- 申请人地址： US CA Sunnyvale US CA Sunnyvale
- 专利权人： SPANSION LLC,ADVANCED MICRO DEVICES, INC.
- 当前专利权人： SPANSION LLC,ADVANCED MICRO DEVICES, INC.
- 当前专利权人地址： US CA Sunnyvale US CA Sunnyvale
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L21/8247
摘要：
A method for forming an integrated circuit system is provided including forming a substrate having a core region and a periphery region, forming a charge storage stack over the substrate in the core region, forming a gate stack with a stack header having a metal portion over the substrate in the periphery region, and forming a memory system with the stack header over the charge storage stack.
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