发明申请
- 专利标题： MEMORY SYSTEM WITH FIN FET TECHNOLOGY
- 专利标题（中）： 具有FIN FET技术的存储系统
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申请号： US11614815申请日： 2006-12-21
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公开(公告)号： US20080150029A1公开(公告)日： 2008-06-26
- 发明人: Wei Zheng , Lei Xue , Kuo-Tung Chang
- 申请人： Wei Zheng , Lei Xue , Kuo-Tung Chang
- 申请人地址： US CA Sunnyvale
- 专利权人： SPANSION LLC
- 当前专利权人： SPANSION LLC
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A method for manufacturing a memory system is provided including forming a charge-storage layer on a first insulator layer including insulating the charge-storage layer from a vertical fin, forming a second insulator layer from the charge-storage layer, and forming a gate over the second insulator includes forming a fin field effect transistor.
公开/授权文献
- US08785268B2 Memory system with Fin FET technology 公开/授权日：2014-07-22
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