发明申请
US20080158739A1 TUNNEL-EFFECT TYPE MAGNETIC SENSOR HAVING FREE LAYER INCLUDING NON-MAGNETIC METAL LAYER
失效
具有无磁层的隧道效应型磁传感器，包括非磁性金属层
- 专利标题： TUNNEL-EFFECT TYPE MAGNETIC SENSOR HAVING FREE LAYER INCLUDING NON-MAGNETIC METAL LAYER
- 专利标题（中）： 具有无磁层的隧道效应型磁传感器，包括非磁性金属层
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申请号： US11671819申请日： 2007-02-06
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公开(公告)号： US20080158739A1公开(公告)日： 2008-07-03
- 发明人: Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
- 申请人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
- 申请人地址： JP Tokyo
- 专利权人： ALPS ELECTRIC CO., LTD.
- 当前专利权人： ALPS ELECTRIC CO., LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-355043 20061228
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A free magnetic layer of a tunnel-effect type magnetic sensor is formed on an insulating barrier layer made of Mg—O, and the free magnetic layer includes an enhancement layer, a first soft magnetic layer, a non-magnetic metal layer, and a second soft magnetic layer, which are laminated in that order from the bottom. For example, the enhancement layer is formed of Co—Fe, the first and the second soft magnetic layers are formed of Ni—Fe, and the non-magnetic metal layer is formed of Ta. The average thickness of the first soft magnetic layer is formed in the range of 5 to 60 Å. Accordingly, a high resistance change rate (ΔR/R) can be obtained.
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