A method for depositing a copper seed layer onto a semiconductor substrate comprises applying a SCuD plating bath onto a surface of a substrate, rinsing the surface with an organic solvent, applying a co-reactant bath to the surface, and again rinsing the surface with an organic solvent. The SCuD plating bath is non-aqueous and comprises a copper precursor that is dissolved into an organic solvent. The co-reactant bath is also non-aqueous and comprises a co-reactant dissolved into an organic solvent. The SCuD plating bath may be heated before being applied to the substrate surface.