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    Spontaneous copper seed deposition process for metal interconnects
    2.
    发明申请
    Spontaneous copper seed deposition process for metal interconnects 审中-公开
    金属互连的自发铜种子沉积工艺

    公开(公告)号：US20080160204A1

    公开(公告)日：2008-07-03

    申请号：US11648006

    申请日：2006-12-28

    申请人： Adrien R. Lavoie ,  James M. Blackwell ,  Darryl J. Morrison ,  Manish Sharma

    发明人： Adrien R. Lavoie ,  James M. Blackwell ,  Darryl J. Morrison ,  Manish Sharma

    IPC分类号： B05D1/18 ,  B05C3/00

    CPC分类号： H01L21/288 ,  C23C18/38 ,  C23C18/40 ,  C25D3/38 ,  H01L21/76873 ,  H01L21/76874

    摘要： A method for depositing a copper seed layer onto a semiconductor substrate comprises applying a SCuD plating bath onto a surface of a substrate, rinsing the surface with an organic solvent, applying a co-reactant bath to the surface, and again rinsing the surface with an organic solvent. The SCuD plating bath is non-aqueous and comprises a copper precursor that is dissolved into an organic solvent. The co-reactant bath is also non-aqueous and comprises a co-reactant dissolved into an organic solvent. The SCuD plating bath may be heated before being applied to the substrate surface.

    摘要翻译： 一种将铜籽晶层沉积在半导体衬底上的方法包括将SCuD电镀浴施加到衬底的表面上，用有机溶剂冲洗表面，向表面施加共反应物浴，再次用 有机溶剂。 SCUD电镀浴是非水性的并且包含溶解在有机溶剂中的铜前体。 共反应物浴也是非水的并且包含溶解在有机溶剂中的共反应物。 可以在施加到基板表面之前加热SCUD电镀浴。

    Ligand Synthesis
    3.
    发明申请
    Ligand Synthesis 有权
    配体合成

    公开(公告)号：US20130310590A1

    公开(公告)日：2013-11-21

    申请号：US13870518

    申请日：2013-04-25

    申请人： Xiaoliang Gao ,  Darryl J. Morrison ,  Charles Ashton Garret Carter

    发明人： Xiaoliang Gao ,  Darryl J. Morrison ,  Charles Ashton Garret Carter

    IPC分类号： C07F7/16

    CPC分类号： C07F7/16 ,  C07F7/0827 ,  C07F7/083

    摘要： Compounds 1,3,4-(SiMe3)(C6F5)(alkyl)C5H3 are made using a simplified synthetic strategy which is readily scalable. On reaction with a suitable transition metal species, a 1,3,4-(SiMe3)(C6F5)(alkyl)C5H3 molecule provides an organotransition metal complex comprising a 1,2-(C6F5)(alkyl) substituted cyclopentadienyl ligand, which is active toward olefin polymerization.

    摘要翻译： 化合物1,3,4-（SiMe 3）（C 6 F 5）（烷基）C 5 H 3是使用易于扩展的简化合成策略制备的。 通过与合适的过渡金属物质的反应，1,3,4-（SiMe 3）（C 6 F 5）（烷基）C 5 H 3分子提供了包含1,2-（C 6 F 5）（烷基）取代的环戊二烯基配体的有机过渡金属络合物， 对烯烃聚合有活性。

    Ligand synthesis
    6.
    发明授权
    Ligand synthesis 有权
    配体合成

    公开(公告)号：US09045504B2

    公开(公告)日：2015-06-02

    申请号：US13870518

    申请日：2013-04-25

    申请人： Xiaoliang Gao ,  Darryl J. Morrison ,  Charles Ashton Garret Carter

    发明人： Xiaoliang Gao ,  Darryl J. Morrison ,  Charles Ashton Garret Carter

    IPC分类号： C07F7/08 ,  C07F7/16

    CPC分类号： C07F7/16 ,  C07F7/0827 ,  C07F7/083

    摘要： Compounds 1,3,4-(SiMe3)(C6F5)(alkyl)C5H3 are made using a simplified synthetic strategy which is readily scalable. On reaction with a suitable transition metal species, a 1,3,4-(SiMe3)(C6F5)(alkyl)C5H3 molecule provides an organotransition metal complex comprising a 1,2-(C6F5)(alkyl) substituted cyclopentadienyl ligand, which is active toward olefin polymerization.

    摘要翻译： 化合物1,3,4-（SiMe 3）（C 6 F 5）（烷基）C 5 H 3是使用易于扩展的简化合成策略制备的。 通过与合适的过渡金属物质的反应，1,3,4-（SiMe 3）（C 6 F 5）（烷基）C 5 H 3分子提供了包含1,2-（C 6 F 5）（烷基）取代的环戊二烯基配体的有机过渡金属络合物， 对烯烃聚合有活性。

    High K dielectric growth on metal triflate or trifluoroacetate terminated III-V semiconductor surfaces
    8.
    发明授权
    High K dielectric growth on metal triflate or trifluoroacetate terminated III-V semiconductor surfaces 失效
    金属三氟甲磺酸盐或三氟乙酸封端III-V半导体表面上的高K电介质生长

    公开(公告)号：US07763317B2

    公开(公告)日：2010-07-27

    申请号：US11694781

    申请日：2007-03-30

    申请人： James M. Blackwell ,  Willy Rachmady ,  Gregory J. Kearns ,  Darryl J. Morrison

    发明人： James M. Blackwell ,  Willy Rachmady ,  Gregory J. Kearns ,  Darryl J. Morrison

    IPC分类号： C23C16/00

    CPC分类号： H01L21/0228 ,  H01L21/02178 ,  H01L21/306 ,  H01L21/3141

    摘要： Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.

    摘要翻译： 描述了化合物半导体表面如铟锑酸盐（InSb）与三氟甲磺酸酐或三氟乙酰化剂如三氟乙酸酐之类的三氟甲磺酸酯的表面处理。 在一个实施方案中，三氟甲磺酸酯或三氟乙酰化剂通过用三氟甲磺酸酯三氟乙酸酯基团终止表面而钝化化合物半导体表面。 在另一个实施方案中，使用三氟甲磺酸酯或三氟乙酰化剂来将存在于化合物半导体表面上的薄的天然氧化物转化为可溶物质。 在另一个实施方案中，通过使三氟甲磺酸酯或三氟乙酸酯保护基团与质子源如水（H 2 O）反应，钝化的化合物半导体表面在ALD室中活化。 然后将金属有机前体引入ALD室中以在化合物半导体表面上形成良好质量的界面层，例如氧化铝（Al 2 O 3）。

    HIGH K DIELECTRIC GROWTH ON METAL TRIFLATE OR TRIFLUOROACETATE TERMINATED III-V SEMICONDUCTOR SURFACES
    9.
    发明申请
    HIGH K DIELECTRIC GROWTH ON METAL TRIFLATE OR TRIFLUOROACETATE TERMINATED III-V SEMICONDUCTOR SURFACES 失效
    金属三聚物或三氟化铵终止的III-V半导体表面的高K电介质生长

    公开(公告)号：US20080241423A1

    公开(公告)日：2008-10-02

    申请号：US11694781

    申请日：2007-03-30

    申请人： James M. Blackwell ,  Willy Rachmady ,  Gregory J. Kearns ,  Darryl J. Morrison

    发明人： James M. Blackwell ,  Willy Rachmady ,  Gregory J. Kearns ,  Darryl J. Morrison

    IPC分类号： C23C22/00

    CPC分类号： H01L21/0228 ,  H01L21/02178 ,  H01L21/306 ,  H01L21/3141

    摘要： Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.

    摘要翻译： 描述了化合物半导体表面如铟锑酸盐（InSb）与三氟甲磺酸酐或三氟乙酰化剂如三氟乙酸酐之类的三氟甲磺酸酯的表面处理。 在一个实施方案中，三氟甲磺酸酯或三氟乙酰化剂通过用三氟甲磺酸酯三氟乙酸酯基团终止表面而钝化化合物半导体表面。 在另一个实施方案中，使用三氟甲磺酸酯或三氟乙酰化剂来将存在于化合物半导体表面上的薄的天然氧化物转化为可溶物质。 在另一个实施方案中，钝化的化合物半导体表面通过使三氟甲磺酸酯或三氟乙酸酯保护基与质子源（例如水（H 2 O 2））反应而在ALD室中活化。 然后将金属有机前体引入ALD室中以在化合物半导体表面上形成良好质量的界面层，例如氧化铝（Al 2 O 3 O 3）。