发明申请
- 专利标题： Structure and Method for Mosfet Gate Electrode Landing Pad
- 专利标题（中）： Mosfet栅极电极着陆垫的结构和方法
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申请号： US12054644申请日： 2008-03-25
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公开(公告)号： US20080164525A1公开(公告)日： 2008-07-10
- 发明人: Lawrence A. Clevenger , Timothy J. Dalton , Louis C. Hsu , Carl Radens , Kwong Hon Wong , Chih-Chao Yang
- 申请人： Lawrence A. Clevenger , Timothy J. Dalton , Louis C. Hsu , Carl Radens , Kwong Hon Wong , Chih-Chao Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/782
摘要：
A transistor device and method of forming the same comprises a substrate; a first gate electrode over the substrate; a second gate electrode over the substrate; and a landing pad comprising a pair of flanged ends overlapping the second gate electrode, wherein the structure of the second gate electrode is discontinuous with the structure of the landing pad.
公开/授权文献
- US08304912B2 Structure and method for MOSFET gate electrode landing pad 公开/授权日：2012-11-06
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