发明申请
US20080165335A1 IMMERSION LITHOGRAPHY WITH EQUALIZED PRESSURE ON AT LEAST PROJECTION OPTICS COMPONENT AND WAFER
有权
在最小投影光学元件和波长下具有均匀压力的倾斜平面图
- 专利标题: IMMERSION LITHOGRAPHY WITH EQUALIZED PRESSURE ON AT LEAST PROJECTION OPTICS COMPONENT AND WAFER
- 专利标题(中): 在最小投影光学元件和波长下具有均匀压力的倾斜平面图
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申请号: US12051572申请日: 2008-03-19
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公开(公告)号: US20080165335A1公开(公告)日: 2008-07-10
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Peter H. Mitchell
- 申请人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Peter H. Mitchell
- 主分类号: G03B27/42
- IPC分类号: G03B27/42
摘要:
An immersion lithography apparatus and method, and a lithographic optical column structure are disclosed for conducting immersion lithography with at least the projection optics of the optical system and the wafer in different fluids at the same pressure. In particular, an immersion lithography apparatus is provided in which a supercritical fluid is introduced about the wafer, and another fluid, e.g., an inert gas, is introduced to at least the projection optics of the optical system at the same pressure to alleviate the need for a special lens. In addition, the invention includes an immersion lithography apparatus including a chamber filled with a supercritical immersion fluid and enclosing a wafer to be exposed and at least a projection optic component of the optical system.
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