公开(公告)号：US20080165335A1

公开(公告)日：2008-07-10

申请号：US12051572

申请日：2008-03-19

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Peter H. Mitchell

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Peter H. Mitchell

IPC分类号： G03B27/42

CPC分类号： G03F7/70341

摘要： An immersion lithography apparatus and method, and a lithographic optical column structure are disclosed for conducting immersion lithography with at least the projection optics of the optical system and the wafer in different fluids at the same pressure. In particular, an immersion lithography apparatus is provided in which a supercritical fluid is introduced about the wafer, and another fluid, e.g., an inert gas, is introduced to at least the projection optics of the optical system at the same pressure to alleviate the need for a special lens. In addition, the invention includes an immersion lithography apparatus including a chamber filled with a supercritical immersion fluid and enclosing a wafer to be exposed and at least a projection optic component of the optical system.

摘要翻译： 公开了一种浸没式光刻设备和方法以及平版印刷光学柱结构，用于在相同压力下用不同流体中的光学系统和晶片的至少投影光学器件进行浸没光刻。 特别地，提供了一种浸没式光刻设备，其中超临界流体被引入晶片周围，并且另一种流体（例如惰性气体）在相同的压力下被引入光学系统的至少投影光学器件以减轻需要 用于特殊镜头。 此外，本发明包括浸没式光刻设备，其包括填充有超临界浸没流体的腔室并且封装要暴露的晶片和至少光学系统的投影光学部件。

公开(公告)号：US20070296937A1

公开(公告)日：2007-12-27

申请号：US11426458

申请日：2006-06-26

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger ,  Peter H. Mitchell

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger ,  Peter H. Mitchell

IPC分类号： G03B27/42

CPC分类号： G03B27/42 ,  G03F7/70341 ,  G03F7/7085 ,  G03F7/70916

摘要： Embodiments of the invention present a system, method, etc. for illumination light in an immersion lithography stepper for particle or bubble detection. More specifically, embodiments herein provide an immersion lithography expose system comprising a wafer holder for holding a wafer, an immersion liquid for covering the wafer, an immersion head to dispense and contain said immersion liquid, and a light source adapted to lithographically expose a resist on the wafer. The system also comprises a light detector at a first location of the immersion head and a laser source at a second location within said immersion head.

摘要翻译： 本发明的实施例在用于颗粒或气泡检测的浸没式光刻步进机中提供照明光的系统，方法等。 更具体地，本文的实施例提供了浸没式光刻曝光系统，其包括用于保持晶片的晶片保持器，用于覆盖晶片的浸没液体，用于分配和容纳所述浸没液体的浸没头，以及适于光刻曝光抗蚀剂的光源 晶圆。 该系统还包括在浸没头的第一位置处的光检测器和位于所述浸没头内的第二位置处的激光源。

公开(公告)号：US07250347B2

公开(公告)日：2007-07-31

申请号：US10905979

申请日：2005-01-28

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell ,  Larry A. Nesbit

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell ,  Larry A. Nesbit

IPC分类号： H01L21/336

CPC分类号： H01L29/66772 ,  H01L29/42384 ,  H01L29/78648 ,  H01L29/78654

摘要： A method for forming transistors with mutually-aligned double gates. The method includes the steps of (a) providing a wrap-around-gate transistor structure, wherein the wrap-around-gate transistor structure includes (i) semiconductor region, and (ii) a gate electrode region wrapping around the semiconductor region, wherein the gate electrode region is electrically insulated from the semiconductor region by a gate dielectric film; and (b) removing first and second portions of the wrap-around-gate transistor structure so as to form top and bottom gate electrodes from the gate electrode region, wherein the top and bottom gate electrodes are electrically disconnected from each other.

摘要翻译： 一种用于形成具有相互对准的双栅极的晶体管的方法。 该方法包括以下步骤：（a）提供环绕栅极晶体管结构，其中环绕栅极晶体管结构包括（i）半导体区域和（ii）围绕半导体区域包围的栅电极区域，其中 栅电极区域通过栅极电介质膜与半导体区域电绝缘; 以及（b）去除环绕栅极晶体管结构的第一和第二部分，以便从栅极电极区域形成顶部和底部栅电极，其中顶部和底部栅电极彼此电断开。

公开(公告)号：US06998204B2

公开(公告)日：2006-02-14

申请号：US10707009

申请日：2003-11-13

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell ,  Larry A. Nesbit

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell ,  Larry A. Nesbit

IPC分类号： G01F9/00

CPC分类号： G03F1/30 ,  G03F1/54 ,  G03F1/68

摘要： The invention provides a method of forming a phase shift mask and the resulting phase shift mask. The method forms a non-transparent film on a transparent substrate and patterns an etch stop layer on the non-transparent film. The invention patterns the non-transparent film using the etch stop layer to expose areas of the transparent substrate. Next, the invention forms a mask on the non-transparent film to protect selected areas of the transparent substrate and forms a phase shift oxide on exposed areas of the transparent substrate. Subsequently, the mask is removed and the phase shift oxide is polished down to the etch stop layer, after which the etch stop layer is removed.

摘要翻译： 本发明提供一种形成相移掩模的方法和所得到的相移掩模。 该方法在透明基板上形成不透明的薄膜，并在非透明薄膜上形成蚀刻停止层。 本发明使用蚀刻停止层来图案化非透明膜以暴露透明基底的区域。 接下来，本发明在非透明膜上形成掩模，以保护透明基板的选定区域，并在透明基板的曝光区域上形成相移氧化物。 随后，去除掩模并将相移氧化物抛光到蚀刻停止层，之后去除蚀刻停止层。

公开(公告)号：US07889317B2

公开(公告)日：2011-02-15

申请号：US12051572

申请日：2008-03-19

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Peter H. Mitchell

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Peter H. Mitchell

IPC分类号： G03B27/42

CPC分类号： G03F7/70341

摘要： An immersion lithography apparatus and method, and a lithographic optical column structure are disclosed for conducting immersion lithography with at least the projection optics of the optical system and the wafer in different fluids at the same pressure. In particular, an immersion lithography apparatus is provided in which a supercritical fluid is introduced about the wafer, and another fluid, e.g., an inert gas, is introduced to at least the projection optics of the optical system at the same pressure to alleviate the need for a special lens. In addition, the invention includes an immersion lithography apparatus including a chamber filled with a supercritical immersion fluid and enclosing a wafer to be exposed and at least a projection optic component of the optical system.

摘要翻译： 公开了一种浸没式光刻设备和方法以及平版印刷光学柱结构，用于在相同压力下用不同流体中的光学系统和晶片的至少投影光学器件进行浸没光刻。 特别地，提供了一种浸没式光刻设备，其中超临界流体被引入晶片周围，并且另一种流体（例如惰性气体）在相同的压力下被引入光学系统的至少投影光学器件以减轻需要 用于特殊镜头。 此外，本发明包括浸没式光刻设备，其包括填充有超临界浸没流体的腔室并且封装要暴露的晶片和至少光学系统的投影光学部件。

公开(公告)号：US07585614B2

公开(公告)日：2009-09-08

申请号：US10711458

申请日：2004-09-20

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell ,  Larry A. Nesbit ,  James A. Slinkman

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell ,  Larry A. Nesbit ,  James A. Slinkman

IPC分类号： G03F7/00

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139

摘要： A method of patterning which provides images substantially smaller than that possible by lithographic techniques is provided. In the method of the invention, a substrate has a memory layer and a sacrificial layer formed thereon. An image is patterned onto the memory layer by protecting an edge during an etching step using chemical oxide removal (COR) processes, for example. Another edge is memorized in the layer. The sacrificial layer is removed to expose another memorized edge, which is used to define a pattern in an underlying layer.

摘要翻译： 提供了一种通过光刻技术提供显着小于可能的图像的图案化方法。 在本发明的方法中，衬底具有形成在其上的存储层和牺牲层。 例如，通过使用化学氧化物去除（COR）工艺在蚀刻步骤期间保护边缘，将图像图案化到存储层上。 另一个边缘被记住在图层中。 去除牺牲层以露出另一个存储的边缘，其用于在下层中定义图案。

公开(公告)号：US07385673B2

公开(公告)日：2008-06-10

申请号：US11160156

申请日：2005-06-10

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Peter H. Mitchell

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Peter H. Mitchell

IPC分类号： G03B27/42

CPC分类号： G03F7/70341

摘要： An immersion lithography apparatus and method, and a lithographic optical column structure are disclosed for conducting immersion lithography with at least the projection optics of the optical system and the wafer in different fluids at the same pressure. In particular, an immersion lithography apparatus is provided in which a supercritical fluid is introduced about the wafer, and another fluid, e.g., an inert gas, is introduced to at least the projection optics of the optical system at the same pressure to alleviate the need for a special lens. In addition, the invention includes an immersion lithography apparatus including a chamber filled with a supercritical immersion fluid and enclosing a wafer to be exposed and at least a projection optic component of the optical system.

摘要翻译： 公开了一种浸没式光刻设备和方法以及平版印刷光学柱结构，用于在相同压力下用不同流体中的光学系统和晶片的至少投影光学器件进行浸没光刻。 特别地，提供了一种浸没式光刻设备，其中超临界流体被引入晶片周围，并且另一种流体（例如惰性气体）在相同的压力下被引入光学系统的至少投影光学器件以减轻需要 用于特殊镜头。 此外，本发明包括浸没式光刻设备，其包括填充有超临界浸没流体的腔室并且封装要暴露的晶片和至少光学系统的投影光学部件。

公开(公告)号：US08039334B2

公开(公告)日：2011-10-18

申请号：US12902944

申请日：2010-10-12

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Mark E. Masters

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Mark E. Masters

IPC分类号： H01L21/8234

CPC分类号： H01L21/823412 ,  B01J23/74 ,  B01J37/0238 ,  B82Y10/00 ,  H01L21/7624 ,  H01L21/823437 ,  H01L27/286 ,  H01L51/0048 ,  H01L51/0545 ,  H01L51/055 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/763

摘要： A semiconductor structure in which a planar semiconductor device and a horizontal carbon nanotube transistor have a shared gate and a method of fabricating the same are provided in the present application. The hybrid semiconductor structure includes at least one horizontal carbon nanotube transistor and at least one planar semiconductor device, in which the at least one horizontal carbon nanotube transistor and the at least one planar semiconductor device have a shared gate and the at least one horizontal carbon nanotube transistor is located above a gate of the at least one planar semiconductor device.

摘要翻译： 在本申请中提供了其中平面半导体器件和水平碳纳米管晶体管具有共享栅极的半导体结构及其制造方法。 所述混合半导体结构包括至少一个水平碳纳米管晶体管和至少一个平面半导体器件，其中所述至少一个水平碳纳米管晶体管和所述至少一个平面半导体器件具有共享栅极，并且所述至少一个水平碳纳米管 晶体管位于至少一个平面半导体器件的栅极之上。

公开(公告)号：US08004024B2

公开(公告)日：2011-08-23

申请号：US12348404

申请日：2009-01-05

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III

IPC分类号： H01L29/423 ,  H01L29/78

CPC分类号： H01L29/4983 ,  H01L29/4908 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/7833 ,  H01L29/78621 ,  Y10S977/742 ,  Y10S977/847

摘要： A transistor. The transistor including: a well region in a substrate; a gate dielectric layer on a top surface of the well region; a polysilicon gate electrode on a top surface of the gate dielectric layer; spacers formed on opposite sidewalls of the polysilicon gate electrode; source/drain regions formed on opposite sides of the polysilicon gate electrode in the well region; a first doped region in the polysilicon gate electrode, the first doped region extending into the polysilicon gate electrode from a top surface of the polysilicon gate electrode; and a buried second doped region in the polysilicon gate electrode.

摘要翻译： 晶体管。 晶体管包括：衬底中的阱区; 在所述阱区的顶表面上的栅介质层; 栅极电介质层的顶表面上的多晶硅栅电极; 间隔物形成在多晶硅栅电极的相对侧壁上; 形成在阱区中的多晶硅栅电极的相对侧上的源/漏区; 所述多晶硅栅电极中的第一掺杂区域，所述第一掺杂区域从所述多晶硅栅电极的顶表面延伸到所述多晶硅栅电极; 以及多晶硅栅电极中的掩埋的第二掺杂区。

公开(公告)号：US07557023B2

公开(公告)日：2009-07-07

申请号：US11532189

申请日：2006-09-15

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III

IPC分类号： H01L21/425

CPC分类号： H01L29/66545 ,  H01L21/0273 ,  H01L21/266 ,  H01L21/28035 ,  H01L29/1083 ,  H01L29/6653 ,  H01L29/6659

摘要： A semiconductor fabrication method. The method includes providing a semiconductor structure which includes (i) a semiconductor layer, (ii) a gate dielectric layer on the semiconductor layer, and (iii) a gate electrode region on the gate dielectric layer. The gate dielectric layer is sandwiched between and electrically insulates the semiconductor layer and the gate electrode region. The semiconductor layer and the gate dielectric layer share a common interfacing surface which defines a reference direction perpendicular to the common interfacing surface and pointing from the semiconductor layer to the gate dielectric layer. Next, a resist layer is formed on the gate dielectric layer and the gate electrode region. Next, a cap portion of the resist layer directly above the gate electrode region in the reference direction is removed without removing any portion of the resist layer not directly above the gate electrode region in the reference direction.

摘要翻译： 半导体制造方法。 该方法包括提供半导体结构，其包括（i）半导体层，（ii）半导体层上的栅极电介质层，以及（iii）栅极电介质层上的栅电极区。 栅极电介质层被夹在半导体层和栅极电极区域之间并使其电绝缘。 半导体层和栅极介电层共享公共接口表面，其界定垂直于公共接口表面的参考方向并且从半导体层指向栅极介电层。 接下来，在栅极电介质层和栅极电极区域上形成抗蚀剂层。 接下来，去除在参考方向上正好在栅极区域上方的抗蚀剂层的盖部分，而不去除在参考方向上不在栅电极区域正上方的任何部分的抗蚀剂层。